InGaN laser diode grown on 6H-SiC substrate using low-pressure metalorganic vapor phase epitaxy

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 826-830

  Kuramata, Akito ^a   Domen, Kay ^a   Soejima, Reiko ^a   Horino, Kazuhiko ^a   Kubota, Shin Ichi ^a   Tanahashi, Toshiyuki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

GaN; InGaN; Laser diode; Low pressure metalorganic vapor phase epitaxy; SiC

Indexed keywords

CURRENT DENSITY; ELECTRIC CURRENT CONTROL; LASER PULSES; METALLORGANIC VAPOR PHASE EPITAXY; PRESSURE EFFECTS; REFLECTIVE COATINGS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SUBSTRATES;

LOW PRESSURE METALLORGANIC VAPOR PHASE EPITAXY (MOVPE);

QUANTUM WELL LASERS;

EID: 0032090904     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00303-0     Document Type: Article

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