Dry-etching and characterization of mirrors on III-nitride laser diodes from chemically assisted ion beam etching

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 846-849

  Kneissl, M ^a   Hofstetter, D ^a   Bour, D P ^a   Donaldson, R ^a   Walker, J ^a   Johnson, N M ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

CAIBE; Dry etching; GaN; Laser diode; Mirror; Nitrides

Indexed keywords

DRY ETCHING; ION BEAMS; LIGHT REFLECTION; METALLORGANIC VAPOR PHASE EPITAXY; MIRRORS; OPTICAL PUMPING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS;

CHEMICALLY ASSISTED ION BEAM ETCHING (CAIBE); PHOTOPUMPING MEASUREMENTS;

SEMICONDUCTOR LASERS;

EID: 0032092385     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00307-8     Document Type: Article

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