Non-isothermal device simulation of gate switching and drain breakdown characteristics of Si MOSFET in transient state

IEICE Transactions on Electronics

Volumn E82-C, Issue 6, 1999, Pages 894-899

  Kawashima, Hirobumi ^a   Dang, Ryo ^a  

^a HOSEI UNIVERSITY   (Japan)

Author keywords

Breakdown; Device simulation; Non isothermal; Si MOSFET; Transient state

Indexed keywords

AVALANCHE DIODES; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC PROPERTIES; NUMERICAL METHODS; POISSON DISTRIBUTION; SEMICONDUCTING SILICON; SWITCHING; THERMODYNAMIC PROPERTIES;

DEVICE SIMULATION; DRAIN BREAKDOWN; GATE SWITCHING; NONISOTHERMAL; TRANSIENT STATE;

MOSFET DEVICES;

EID: 0033353346     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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