Temperature dependence of avalanche breakdown voltage temperature dependence of avalanche breakdown voltage in p—n junctions†

International Journal of Electronics

Volumn 32, Issue 1, 1972, Pages 23-37

  Mars, P ^a  

^a ROBERT GORDON UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84945627065     PISSN: 00207217     EISSN: 13623060     Source Type: Journal    
DOI: 10.1080/00207217208938266     Document Type: Article

References (12)

1. Baraff, G. A., 1962, Phys. Rev., 128, 2507.
2. Crowell, C. R., and Sze, S. M., 1966, Appl. Phys. Lett., 9, 24-2.
3. Hall, R., 1967 a, Int. J. Electron., 22, 521; 1967 b, Int. J. Electron., 22, 519.
4. Hall, R., and Leck, J. H., 1968, int. J. Electron., 25, 539.
5. Kennedy, D. P., and O’Brien, R,, 1965, IBM Jl Res. Dev., 9, 422.
6. Kressel, H., and Blicher, A., 1963, J. appl. Phys., 34, 2495.
7. Logan, R. A., and Sze, S. M., 1966, J. phys. Soc. Japan, 21 (Suppl.), 434.
8. Maserjian, J., 1959, J. appl. Phys., 30, 1613.
9. Miller, S. L,, 1955, Phys. Rev., 99, 1234.
10. Moll, J. L., 1964, Physics of Semiconductors (McGraw-Hill).
11. Sze, S. M., 1969, Physics of Semiconductor Devices (John Wiley).
12. Sze, S. M., and Gibbons, G., 1966, Solid-St. Electron., 9, 831.