Carrier dynamical VLSI device simulation

Semiconductor Science and Technology

Volumn 3, Issue 9, 1988, Pages 886-894

  McAndrew, C C ^a,b   Heasell, E L ^a   Singhal, K ^a,b  

^a UNIVERSITY OF WATERLOO   (Canada)

^b ATandT Rell Laboratories ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0342843401     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/3/9/010     Document Type: Article

References (20)

1. Two-dimensional numerical simulation of energy transport effects in Si and GaAs MESFET's
2. Diffusion effects and "Ballistic transport"
3. Transport equations for electrons in two-valley semiconductors
4. A temperature model for the GaAs MESFET
5. Time-dependent carrier flow in a transistor structure under nonisothermal conditions
6. Numerical simulation of hot-carrier transport in silicon bipolar transistors
7. MINIMOS—A two-dimensional MOS transistor analyzer
8. Threshold-voltage analysis of short- and narrow-channel MOSFET's by three-dimensional computer simulation