-
1
-
-
36149018649
-
Diffusion of hot and cold electrons in semiconductor barriers
-
R. Stratton, “Diffusion of hot and cold electrons in semiconductor barriers,” Phys. Rev., vol. 126, p. 2002, 1962.
-
(1962)
Phys. Rev.
, vol.126
, pp. 2002
-
-
Stratton, R.1
-
2
-
-
0016130235
-
Two-dimensional particle models in semiconductor device analysis
-
R. W. Hockney, R. A. Warriner, and M. Reiser, “Two-dimensional particle models in semiconductor device analysis,” Electron. Lett., vol. 10, p. 484, 1974.
-
(1974)
Electron. Lett.
, vol.10
, pp. 484
-
-
Hockney, R.W.1
Warriner, R.A.2
Reiser, M.3
-
3
-
-
0019024233
-
Saturation mechanism in 1-µm gate GaAs FET with channel-substrate interfacial barrier
-
P. Bonjour et al., “Saturation mechanism in 1-µm gate GaAs FET with channel-substrate interfacial barrier,” IEEE Trans. Electron Devices, vol. ED-27, p. 1019, 1980.
-
(1980)
IEEE Trans. Electron Devices
, vol.ED-27
, pp. 1019
-
-
Bonjour, P.1
-
4
-
-
0019054875
-
Application of Monte-Carlo techniques to hot carrier diffusion noise calculation in unipolar semiconducting component
-
J. Zimmerman and E. Constant, “Application of Monte-Carlo techniques to hot carrier diffusion noise calculation in unipolar semiconducting component,” Solid-State Electron., vol. 23, p. 915, 1980.
-
(1980)
Solid-State Electron
, vol.23
, pp. 915
-
-
Zimmerman, J.1
Constant, E.2
-
5
-
-
84910470079
-
A particle model simulation of field effect transistors
-
Dublin, Ireland: Boole Press
-
C. Moglestue and S. J. Beard, “A particle model simulation of field effect transistors,” in Numerical Analysis of Semiconductor Devices. Dublin, Ireland: Boole Press, 1979.
-
(1979)
Numerical Analysis of Semiconductor Devices
-
-
Moglestue, C.1
Beard, S.J.2
-
6
-
-
0039571829
-
Theory of negative conductance amplification and of Gunn instabilities in ‘two valley’ semiconductors
-
D. E. McCumber and A. G. Chynoweth, “Theory of negative conductance amplification and of Gunn instabilities in ‘two valley’ semiconductors,” IEEE Trans. Electron Devices, vol. ED-13, p. 4, 1966.
-
(1966)
IEEE Trans. Electron Devices
, vol.ED-13
, pp. 4
-
-
McCumber, D.E.1
Chynoweth, A.G.2
-
7
-
-
0015994988
-
Computer simulation of transferred electron devices using the drifted Maxwellian approach
-
R. Bosch and H. Thim, “Computer simulation of transferred electron devices using the drifted Maxwellian approach,” IEEE Trans. Electron Devices, vol. ED-2, p. 16, 1974.
-
(1974)
IEEE Trans. Electron Devices
, vol.ED-2
, pp. 16
-
-
Bosch, R.1
Thim, H.2
-
8
-
-
84935408821
-
Non-isothermal effects in bulk GaAs transit-time-mode oscillators
-
D. C. Hanson and J. E. Rose, “Non-isothermal effects in bulk GaAs transit-time-mode oscillators,” Int. J. Electron., vol. 24, p. 415, 1968.
-
(1968)
Int. J. Electron.
, vol.24
, pp. 415
-
-
Hanson, D.C.1
Rose, J.E.2
-
9
-
-
0019606795
-
Diffusion effects and ‘Ballistic’ transport
-
R. K. Cook and J. Frey, “Diffusion effects and ‘Ballistic’ transport,” IEEE Trans. Electron Devices, vol. ED-28, p. 951, 1981.
-
(1981)
IEEE Trans. Electron Devices
, vol.ED-28
, pp. 951
-
-
Cook, R.K.1
Frey, J.2
-
12
-
-
0019607025
-
A temperature model for the GaAs MESFET
-
W. R. Curtice and Y. H. Yun, “A temperature model for the GaAs MESFET,” IEEE Trans. Electron Devices, vol. ED-28, p. 954, 1981.
-
(1981)
IEEE Trans. Electron Devices
, vol.ED-28
, pp. 954
-
-
Curtice, W.R.1
Yun, Y.H.2
-
13
-
-
84918131715
-
Velocity overshoot effects in two-dimensional device simulation
-
Dublin, Ireland: Boole Press
-
C. R. Brewitt-Taylor, “Velocity overshoot effects in two-dimensional device simulation,” in Numerical Analysis of Semiconductor Devices. Dublin, Ireland: Boole Press, 1979.
-
(1979)
Numerical Analysis of Semiconductor Devices
-
-
Brewitt-Taylor, C.R.1
-
14
-
-
0019527791
-
Determination of the transient regime in semiconductor devices using relaxation time approximations
-
J. P. Nougier et al., “Determination of the transient regime in semiconductor devices using relaxation time approximations,” J. Appl. Phys., vol. 52, p. 825, 1981.
-
(1981)
J. Appl. Phys.
, vol.52
, pp. 825
-
-
Nougier, J.P.1
-
15
-
-
35949034048
-
Effect of electron-electron scattering on hot-electron repopulation in n-Si at 77$dG;K
-
J. G. Nash and J. W. Holm-Kennedy, “Effect of electron-electron scattering on hot-electron repopulation in n-Si at 77$dG;K,” Phys. Rev. B, vol. 16, p. 2834, 1977.
-
(1977)
Phys. Rev. B
, vol.16
, pp. 2834
-
-
Nash, J.G.1
Holm-Kennedy, J.W.2
-
16
-
-
84939744383
-
-
M.S. thesis, Cornell Univ., Ithaca, NY
-
J V. Faricelli, “Physics of large-signal response of short-channel MESFET's,” M.S. thesis, Cornell Univ., Ithaca, NY, 1980.
-
(1980)
“Physics of large-signal response of short-channel MESFET's,”
-
-
Faricelli, J.V.1
-
17
-
-
0014705867
-
Transport equations for two-valley semiconductors
-
K. Blotekjaer, “Transport equations for two-valley semiconductors,” IEEE Trans. Electron Devices, vol. ED-17, p. 38, 1970.
-
(1970)
IEEE Trans. Electron Devices
, vol.ED-17
, pp. 38
-
-
Blotekjaer, K.1
-
18
-
-
33747239790
-
Influence of non-uniform field distribution on frequency limits of GaAs field-effect transistors
-
M. S. Shur, “Influence of non-uniform field distribution on frequency limits of GaAs field-effect transistors,” Electron Lett., vol. 12, p. 615, 1976.
-
(1976)
Electron Lett.
, vol.12
, pp. 615
-
-
Shur, M.S.1
-
19
-
-
0017453673
-
A review of some charge transport properties of silicon
-
C. Jacoboni et al., “A review of some charge transport properties of silicon,” Solid-State Electron., vol. 20, p. 77, 1977.
-
(1977)
Solid-State Electron
, vol.20
, pp. 77
-
-
Jacoboni, C.1
-
20
-
-
0001485414
-
Electron velocity in Si and GaAs at very high electric fields
-
P. M. Smith, M. Inoue, and J. Frey, “Electron velocity in Si and GaAs at very high electric fields,” J. Appl. Phys., vol. 37, p. 797, 1980.
-
(1980)
J. Appl. Phys.
, vol.37
, pp. 797
-
-
Smith, P.M.1
Inoue, M.2
Frey, J.3
-
21
-
-
84916349488
-
-
Ph.D. dissertation, Cornell Univ., Ithaca, NY
-
T. J. Maloney, “Non-equilibrium electron transport in compound semiconductors,” Ph.D. dissertation, Cornell Univ., Ithaca, NY, 1977.
-
(1977)
“Non-equilibrium electron transport in compound semiconductors,”
-
-
Maloney, T.J.1
-
22
-
-
84939020515
-
-
M.S. thesis, Cornell Univ., Ithaca, NY
-
S. Kratzer, “Computer simulations of electron transport in GaAs,” M.S. thesis, Cornell Univ., Ithaca, NY, 1978.
-
(1978)
“Computer simulations of electron transport in GaAs,”
-
-
Kratzer, S.1
-
23
-
-
0004011176
-
Efficient fortran subprograms for the solution of elliptic partial differential equations
-
Tech. Note TN/IA-109
-
P. N. Swartztrauber and R. Sweet, “Efficient fortran subprograms for the solution of elliptic partial differential equations,” National Center for Atmospheric Res., Tech. Note TN/IA-109, 1975.
-
(1975)
National Center for Atmospheric Res
-
-
Swartztrauber, P.N.1
Sweet, R.2
-
24
-
-
84939379012
-
POT4-A fast direct Poisson solver for the rectangle allowing some mixed boundary conditions and internal electrodes
-
RC-2870
-
R. W. Hockney, “POT4-A fast direct Poisson solver for the rectangle allowing some mixed boundary conditions and internal electrodes,” IBM Res. Rep., RC-2870.
-
IBM Res. Rep.
-
-
Hockney, R.W.1
-
25
-
-
84916389355
-
Large signal analysis of a silicon Read diode oscillator
-
D. L. Scharfetter and H. K. Gummel, “Large signal analysis of a silicon Read diode oscillator,” IEEE Trans. Electron Devices, vol. ED-16, p. 64, 1969.
-
(1969)
IEEE Trans. Electron Devices
, vol.ED-16
, pp. 64
-
-
Scharfetter, D.L.1
Gummel, H.K.2
-
27
-
-
0015346006
-
Electron dynamics in short channel field effect transistors
-
J. Ruch, “Electron dynamics in short channel field effect transistors,” IEEE Trans. Electron Devices, vol. ED-19, p. 652, 1972.
-
(1972)
IEEE Trans. Electron Devices
, vol.ED-19
, pp. 652
-
-
Ruch, J.1
-
28
-
-
84939732395
-
GaAs digital integrated circuits for ultra-high speed LSI/VLSI
-
D. F. Barbe, Ed. Berlin, Germany: Springer-Verlag
-
R. C. Eden and B. M. Welch, “GaAs digital integrated circuits for ultra-high speed LSI/VLSI,” in VLSI: Fundamentals and Applications, D. F. Barbe, Ed. Berlin, Germany: Springer-Verlag, 1980.
-
(1980)
VLSI: Fundamentals and Applications
-
-
Eden, R.C.1
Welch, B.M.2
-
29
-
-
84918249959
-
Physical basis of short-channel MESFET operation
-
T. Wada and J. Frey, “Physical basis of short-channel MESFET operation,” IEEE J. Solid-State Circuits, vol. SC-14, p. 398, 1979.
-
(1979)
IEEE J. Solid-State Circuits
, vol.SC-14
, pp. 398
-
-
Wada, T.1
Frey, J.2
|