Numerical simulation of submicrometer devices including coupled nonlocal transport and nonisothermal effects

IEEE Transactions on Electron Devices

Volumn 42, Issue 5, 1995, Pages 890-898

  Apanovich, Y ^a   Blakey, P ^a   Cottle, R ^a   Lyumkis, E ^a   Polsky, B ^a   Shur, A ^a   Tcherniaev, A ^a  

^a Silvaco Data Systems Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CHARGE CARRIERS; COMPUTER SIMULATION; ELECTRIC PROPERTIES; ELECTRON TRANSPORT PROPERTIES; HEATING; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; PARTIAL DIFFERENTIAL EQUATIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SILICON ON INSULATOR TECHNOLOGY;

ISOTHERMAL DRIFT DIFFUSION; ISOTHERMAL ENERGY BALANCED; LATTICE HEATING; NONISOTHERMAL DRIFT DIFFUSION; NONISOTHERMAL ENERGY BALANCED; STRATTON ENERGY BALANCED MODEL; SUBMICROMETER DEVICES;

SEMICONDUCTOR DEVICE MODELS;

EID: 0029309244     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.381985     Document Type: Article

References (26)