Radiation-induced trapped charge in metal-nitride-oxide-semiconductor structure

IEEE Transactions on Nuclear Science

Volumn 46, Issue 6 PART 1, 1999, Pages 1578-1585

  Takahashi, Y ^a  

^a NIHON UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; GAMMA RAYS; IRRADIATION; MATHEMATICAL MODELS; MECHANICS; RADIATION EFFECTS; RADIATION HARDENING; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; SILICON NITRIDE; THRESHOLD VOLTAGE;

CHARGE TRAP MODEL; CHARGE TRAPPING MECHANISM; DEPTH PROFILE; METAL NITRIDE OXIDE SEMICONDUCTOR STRUCTURE; MID GAP VOLTAGE SHIFT; POISSON EQUATION; RADIATION INDUCED TRAPPED CHARGE; SLANTED ETCHING METHOD;

ELECTRIC CHARGE;

EID: 0033307438     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.819124     Document Type: Article

References (17)

1. K H. Zaininger and A. G. Holmes-Siedle, A Survey of Radiation Effects in Metal-Insulator Semiconductor Devices, K. C. A. Review, vol. 28, pp. 208-240, 1967
2. K. Watanabe, M, Kato, T. Okabe, and M. Nagata, Radiation Effects of Double Layer Dielectric Films, IEEE Trans. Nucl. Sei, vol. NS-33, pp. 1216-1222, 1986
3. C. W. Perkins, K. O. Aubuchon, and H. C. Dill, Radiation Effects in Modified Oxide Insulators, IEEE Trans. Nucl. ScL, vol. NS-15, pp. 176-181, 1968
4. P, F. Schmidt, M. J. Rand, J. P. Mitchell, and J. D. Ashner, Radiation-Insensitive Silicon Oxynitride Films for Use in Silicon Devices, lEEETrans. Nucl. ScL, vol, NS-16, pp. 211-219, 1969
5. J. R. Cricchi and D. F, Barbe, Compensation of Radiation Effects by Charge Transport in Metal-Nitride-OxideSemiconductor Structures, Appl. Phys. Lett., vol. 19, pp. 49-51, 1971
6. H.E. Maes and J, Remmerie, Effects of Annealing in Different Ambients on the Hydrogen and Charge Distributions in CVD Silicon Nitride Films, Proc. of Electrochemical Society Meeting, pp. 73-87, 1983
7. V.J. Kapoor and R.A, Turi, Charge Storage and Distribution in the Nitride Layer of the Metal-NitrideOxide-Semiconductor Structures, J. Appl. Phys., vol. 52, No. 1, pp. 311-319, 1981
8. Y. Takahashi, S. Imaki, K. Ohnishi, and M. Yoshikawa, Test structure for determining the charge distribution in the oxide of MOS structure, Proc. IEEE ICMTS, vol. 8, pp. 243-246,1995
9. M. Yoshikawa, K. Saitoh, S. Yoshida, H. Okumura, Y. Takahashi, and K. Ohnishi, Depth profile of trapped charges in oxide layer of 6H-S1C metal-oxidesemiconductor structures, J. Appl, Phys vol. 80, no. 1, pp. 282-287,1996
10. H.E. Boesch, Jr., F.B. McLean, J.M. Benedetto, and J.M. McGarrity, Saturation of Threshold Voltage Shift in MOSFET's at High Total Dose, IEEE Trans. Nucl. Sei., vol. NS-33, pp. 1191-1197, 1986
11. J.M. Benedetto and H.E. Boesch, Jr., The Relationship between 60Co and 10-keV X-ray Damage in MOS Devices, IEEE Trans. Nucl. Sei., vol. NS-33, pp. 1318- 1323, 1986
12. [ 12] C. Chang, C. Hu, and R.W. Brodersen, Quantum Yield of Electron Impact lonization in Silicon, J. Appl. Phys., vol. 57, pp. 302-309, 1985
13. C.M. Dozier and D.B. Brown, Photon Energy Dependence of Radiation Effects in MOS Structures, IEEE Trans. Nucl. Sei., vol. NS-27, pp. 1694-1699, 1980
14. H.E. Boesch, Jr., and F.B. McLean, Hole Transport and Trapping in Field Oxides, IEEE Trans. Nucl. Sei., vol, NS-32, pp. 3940-3945, 1985
15. Y. Kamigaki, S. Minami, and H. Kato, A New Portrayal of Electron and Hole Traps in Amorphous Silicon Nitride, J. Appl. Phys., vol. 68, pp. 2211-2215, 1990
16. F. Martin and X. Aymerich, Characterization of the Spatial distribution of traps in SijN4 by field-assisted discharge of metal-nitride-oxide-semiconductor devices, Thin Solid Films, vol. 221, pp. 147-153,1992
17. Y.C. Park, W.B. Jackson, N.M. Johnson, and S.B. Hagstrom, Spatial Profiling of Electron Traps in Silicon Nitride Thin Films, J. Appl. Phys., vol. 68, pp. 5212-5221, 1990.