Characterization of the spatial distribution of traps in Si3N4 by field-assisted discharge of metal-nitride-oxide-semiconductor devices

Thin Solid Films

Volumn 221, Issue 1-2, 1992, Pages 147-153

  Martin F ^a   Aymerich, X ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES;

ELECTRON TRAPS; METAL-NITRIDE-OXIDE SEMICONDUCTOR; MNOS DEVICES;

SILICON NITRIDE;

EID: 0027003786     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(92)90808-O     Document Type: Article

References (27)

1. A low-voltage alterable EEPROM with metal—oxide-nitride—oxide—semiconductor (MONOS) structures
2. Tunnel mechanism in MNOS structures
3. 4on the discharge of MNOS memory transistors
4. Modeling the memory retention characteristics of silicon-nitride-oxide-silicon nonvolatile transistors in a varying thermal environment
5. Auger depth profiling of MNOS structures by ion sputtering