Photon Energy Dependence of Radiation Effects in MOS Structures

IEEE Transactions on Nuclear Science

Volumn 27, Issue 6, 1980, Pages 1694-1699

  Dozier, C M ^a   Brown, D B ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOS - RADIATION EFFECTS;

CAPACITORS;

EID: 0019245082     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1980.4331090     Document Type: Article

References (31)

1. C.M. Dozier, D.B. Brown and J.W. Sandelin, “Dose and Dose Rate Dependence of 8080A Microprocessor Failures,” IEEE Trans. Nucl. Sci., NS-27, 1299 (1980).
2. D.B. Brown, “Photoelectron Effects on the Dose Deposition in MOS Devices Caused by Low Energy X-Ray Sources,” Also published in this issue.
3. F.B. McLean, H.E. Boesch,Jr., P.S. Winokur, J.M. McGarrity and R.B. Oswald,Jr., “Rapid Annealing and Charge Injection in A1 2 0 3 MIS Capacitors,” IEEE Trans. Nucl. Sci. NS-21, 47 (1974).
4. F.B. McLean, H.E. Boesch,Jr. and J.M. McGarrity, “Hole Transport and Recovery Characteristics of SiO 2 Gate Insulators,” IEEE Trans. Nucl. Sci. NS-23, 1506 (1976).
5. G.W. Hughes, R.J. Powell and M.H. Woods, “Oxide Thickness Dependence of High-Energy-Electron-, VUV-, and Corona-Induced Charge in MOS Capacitors,” Appl. Phys. Lett. 29, 377 (1976).
6. G.F. Derbenwick and B.L. Gregory, “Process Optimization of Radiation-Hardened CMOS Integrated Circuits,” IEEE Trans. Nucl. Sci. NS-22, 2151 (1975).
7. H.E. Boesch,Jr. and J.M. McGarrity, “Charge Yield and Dose Effects in MOS Capacitors at 80K,” IEEE Trans. Nucl. Sci. NS-23, 1520 (1976).
8. E.H. Snow, A.S. Grove and D.J. Fitzgerald, “Effects of Ionizing Radiation on Oxidized Silicon Surfaces and Planar Devices,” Proc. of IEEE 55, 1168 (1967).
9. R.C. Hughes, “Charge-Carrier Transport Phenomena in Amorphous SiO 2 : Direct Measurement of the Drift Mobility and Lifetime,” Phys. Rev. Lett. 30, 1333 (1973).
10. O.L. Curtis,Jr., J.R. Srour, and K.Y. Chiu, “Hole and Electron Transport in SiO 2 Films,” Jour. Appl. Phys. 45, 4506 (1974).
11. J.R. Srour, O.L. Curtis,Jr., and K.Y. Chiu, “Charge Transport Studies i n SiO 2 : Processing Effects and Implications for Radiation Hardening,” IEEE Trans. Nucl. Sci. NS-21, 73 (1974).
12. R.C. Hughes, “Hole Mobility and Transport in Thin SiO 2 Films,” Appl. Phys. Lett. 26, 436 (1975).
13. 13. J.W. Farmer and R.S. Lee, “Photocurrents and Photoconductive Yield i n MOS Structures During X Irradiation,” Jour. Appl. Phys. 46, 2710 (1975).
14. R.C. Hughes,“Electronic and Ionic Charge Carriers in Irradiation Single Crystal and Fused Quartz,” Rad. Effects 26, 225 (1975).
15. R.C. Hughes, E.P. Er Nisse and H.J. Stein, “Hole Transport in MOS Oxides,” IEEE Trans. Nucl. Sci. NS-22, 2227 (1975).
16. R.J. Powell, “Radiation Induced Hole Transport and Electron Tunnel Injection in SiO 2 Films,” Trans. Nucl. Sci. NS-22, 2240 (1975).
17. D.P. Snowden and T.M. Flanagan, “Transient Response of MOS Capcitors to High-Energy Electron Irradiation,” IEEE Trans. Nucl. Sci. NS-22, 2516 (1975).
18. R.E. Leadon, D.P. Snowden and J.M Wilkenfield, “Radiation Effects in Semiconductor and Insulator Materials,” HDL-CR-76-152-1, IRT Corporation, San Diego, CA (April 1976).
19. J.R. Srour, S. Othmer, O.L. Curtis,Jr., and K.Y. Chiu, “Radiation-Induced Charge Transport and Charge Build-up in SiO 2 Films at Low Temperatures,” IEEE Trans. Nucl. Sci. NS-23, 1513 (1976).
20. R.C. Hughes, “High Field Electronic Properties i n siO 2,” Sol. S t. Elec. 21, 251 (1978).
21. D.M. Taylor and Q.H. Mehdi, “Electron-Beam-Inducec Conduction in siO 2 Thin Films,” J. Phys. D. Appl. Phys. 12, 2253 (1979).
22. S. Othmer and J.R. Srour, “Electron Transport in SiO 2 Films at Low Temperatures,” Proc. of Int. Conf. on Physics of MOS Insulators, (to be published).
23. R.C. Hughes, “The Effect of Diffusion on Photoconductivity of Thin Films,” Proc. of Int. Conf. on Physics of MOS Insulators, (to be published).
24. G.A. Ausman and F.B. McLe an, “Electron-Hole Pair Creation Energy in SiO 2,” Appl. Phys. Lett. 26, 173 (1975).
25. J.W. Farmer, Private Commiunication.
26. J.N. Churchill, F.E. Holmstrom and T.W. Collins, “Dynamic Model for e-Beam Irradiation of MOS Capacitors,” Jour. Appl. Phys. 50, 3994 (1979).
27. F.H. Attix, “Thermoluminescence Dosimetry with Calcium Fluoride,” Manual on Radiation Ed. N.W. Holm and R.J. Berry, M. Dekker, Inc., New York, 1969.
28. “Thermoluminescence-Dosimetry (TLD) Systems for Determining Absorbed Dose in Radiation Hardness Testing of Electronic Devices,” E668-78, Annual Book of ASTM Standards, Part 45 ASTM, Philadelphia, PA 19103, p.l.
29. T.L. Johnson, “Comparison of a LiF-Teflon TLD System with Film Badges at the PM-3A Reactor Facility, McMurdo Station, Anartica,” NRL Test and Evaluation Report No. 127 (1971).
30. J.W. Wall and E.A. Burke, “Gamma Dose Distributions at and Near the Interface of Different Materials,” IEEE Trans. Nucl. Sci. NS-17, 305–309 (1970).
31. J.W. Criss, “NRLXRF, A Fortran Program for X-Ray Fluorescence Analysis,” COSMIC Program and Documentation, No. DOD-00065, Computer Software Management and Information Center, University of Georgia, Athens, Georgia 30602; J.W. Criss, Unpublished work; D.B. Brown, J.V. Gilfrich and M.C. Peckerar, “Measurement and Calculation of Absolute Intensities of X-Ray Spectra,” Jour. Appl. Phys. 46, 4537-4540 (1975).