EFFECTS OF ANNEALING IN DIFFERENT AMBIENTS ON THE HYDROGEN AND CHARGE DISTRIBUTIONS IN CVD SILICON NITRIDE FILMS.

Proceedings - The Electrochemical Society

Volumn 83-8, Issue , 1983, Pages 73-87

  Maes, H E ^a   Remmerie, J ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL/COMPOSITIONAL/STRUCTURAL PROPERTIES; HYDROGEN EFFECT; IN/OUT HYDROGEN DIFFUSION; POST-DEPOSITION ANNEAL STEPS; SEMICONDUCTOR TECHNOLOGY; SILICON NITRIDE ROLE;

SILICON COMPOUNDS;

EID: 17144440388     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)