Compensation of radiation effects by charge transport in metal-nitride-oxide-semiconductor structures

Applied Physics Letters

Volumn 19, Issue 3, 1971, Pages 49-51

  Cricchi, J R ^a   Barbe, D F ^a  

^a WESTINGHOUSE ELECTRIC COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002424925     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1653817     Document Type: Article

References (9)

1. [formula omitted] was used for electronic recovery when the 5-V supply voltage was on the gate of the n-channel device during irradiation. [formula omitted] was used for electronic recovery when the 5-V supply voltage was on the gate of the p-channel device during irradiation.