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Volumn 52, Issue 1, 1981, Pages 311-319

Charge storage and distribution in the nitride layer of the metal-nitride-oxide semiconductor structures

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES;

EID: 0019476710     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.328495     Document Type: Article
Times cited : (43)

References (40)
  • 4
    • 84951081757 scopus 로고    scopus 로고
    • this paper contains other relevant references.
  • 10
    • 84950974298 scopus 로고
    • Digest of Technical Papers, 1979 IEEE International Electron Devices Meeting
    • (1979) , vol.374
    • Hampton, F.L.1    Cricci, J.R.2
  • 27
    • 84951039171 scopus 로고
    • Rockwell U.S. Patent No. 3 811 954 (21 May)
    • (1975)
  • 28
    • 84951009243 scopus 로고
    • and U.S. Patent No. 3 859 222 (7 January).
    • (1975)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.