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Journal of Applied Physics

Volumn 68, Issue 5, 1990, Pages 2211-2215

A new portrayal of electron and hole traps in amorphous silicon nitride

(3) Kamigaki, Yoshiaki a Minami, Shin Ichi a Kato, Hisayuki a

a HITACHI LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001386996 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.346524 Document Type: Article

Times cited : (51)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.