Luminescence and reflectivity in the exciton region of homo epitaxial GaN layers grown on GaN substrates

Solid State Communications

Volumn 97, Issue 11, 1996, Pages 919-922

  Pakula K ^a   Wysmolek A ^a   Korona, K P ^a   Baranowski, J M ^a,b   Stepniewski R ^a   Grzegory, I ^b   Bockowski M ^b   Jun, J ^b   Krukowski, S ^b   Wroblewski M ^b   Porowski, S ^b  

^a UNIVERSITY OF WARSAW   (Poland)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

A. gallium nitride; D. optical properties; E. luminescence; Reflectance

Indexed keywords

CHARGE CARRIERS; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; REFLECTOMETERS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; SUBSTRATES;

EXCITONIC STRUCTURE; NEUTRAL ACCEPTOR; NEUTRAL DONOR; PHOTOLUMINESCENCE MEASUREMENT; TRIMETHYLGALLIUM;

EXCITONS;

EID: 0030105348     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(95)00816-0     Document Type: Article

References (7)

1. S. Porowski, J. Jun, M. Boćkowski, M. Leszczyriski, S. Krukowski, M. Wróblewski, B. Łucznik, I. Grzegory, Proc. 8th Conf. on Semi-Insulating III-V Materials, Warsaw, Poland 1994, ed. M. Godlewski, Word Scientific, p.61
2. D. Jenkins, J.D. Dow, Ming-hsiung Tsai, J. Appl. Phys. 72, p.4130 (1992)
3. C.W. Allen, "Astrophysical Quantities", University of London, The Althlone Press, 1963, p,119
4. K. Pakuła, J.M. Baranowski, R. Stȩpniewski, A. Wysmołek, I. Grzegory, J. Jun, M. Sawicki, S. Porowski, K. Starowiejski, to be published in Acta Phys. Pol.
5. R. Dingle, D.D. Sell, E. Stokowski, and M. Ilegems, Phys. Rev. B4, p 1211 (1971)
6. B. Monemar, Phys.Rev. B10, p.676 (1974)
7. W. Shan, T.J. Smith, X.H. Yang, S.J. Hwang, J.J. Song, B. Goldenberg, Appl. Phys. Lett. 66, p.985 (1995)