Diffusion of copper through dielectric films under bias temperature stress

Thin Solid Films

Volumn 262, Issue 1-2, 1995, Pages 168-176

  Raghavan, Gopal ^a   Chiang, Chien ^a   Anders, Paul B ^a   Tzeng, Sing Mo ^a   Villasol, Reynaldo ^a   Bai, Gang ^a   Bohr, Mark ^b   Fraser, David B ^a  

^a SCI 03 Components Research Intel Corporation Santa Clara CA 95052 USA ^*

^b INTEL CORPORATION   (United States)

Author keywords

Copper; Dielectrics

Indexed keywords

ACTIVATION ENERGY; COPPER; DIFFUSION IN SOLIDS; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; ELECTRIC SPACE CHARGE; LEAKAGE CURRENTS; MATHEMATICAL MODELS; NITRIDES; OXIDES; THERMAL EFFECTS; THERMAL STRESS;

BARRIER LIFETIME; BIAS TEMPERATURE STRESS; CURRENT TIME CHARACTERISTICS; IONIC CURRENT; IONIC DRIFT; NEUTRALIZING ELECTRON CURRENT; OXYNITRIDE FILMS; THERMAL OXIDE; THREE STEP MODEL;

DIELECTRIC FILMS;

EID: 0029325536     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(95)05839-7     Document Type: Article

References (7)

1. Diffusion of metals in silicon dioxide
2. Impact of copper contamination on the quality of silicon oxides
3. 2
4. Dielectric barrier study for copper metallization