GaN MODFET microwave power technology for future generation radar and communications systems

Solid-State Electronics

Volumn 43, Issue 8, 1999, Pages 1473-1478

  Grider, D E ^a   Nguyen, N X ^a   Nguyen, C ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; MESFET DEVICES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; NATURAL FREQUENCIES; RADAR EQUIPMENT; SATELLITE COMMUNICATION SYSTEMS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON CARBIDE;

DRAIN CURRENT DENSITY; GALLIUM NITRIDE; MODULATION DOPED FIELD EFFECT TRANSISTOR;

FIELD EFFECT TRANSISTORS;

EID: 0033175366     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00091-X     Document Type: Article

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