SiC MESFET with output power of 50 watts CW at S-band

Annual Device Research Conference Digest

Volumn , Issue , 1998, Pages 92-93

  Sadler, R A ^a   Allen, S T ^a   Alcorn, T S ^a   Pribble, W L ^a   Sumakeris, J ^a   Palmour, J W ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POWER MEASUREMENT; GATES (TRANSISTOR); MICROWAVE DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING; SILICON CARBIDE; THRESHOLD VOLTAGE;

EPITAXIAL LAYER; GATE DRAIN SPACING; GATE SOURCE SPACING; ON WAFER LOAD PULL MEASUREMENT; POWER ADDED EFFICIENCY; S BAND; X BAND;

MESFET DEVICES;

EID: 0032307285     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)