Silicon carbide MESFET's for high-power S-band applications

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 1997, Pages 57-60

  Allen, S T ^a   Sadler, R A ^a   Alcorn, T S ^a   Palmour, J W ^a   Carter Jr , C H ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; GATES (TRANSISTOR); NATURAL FREQUENCIES; SILICON CARBIDE;

POWER ADDED EFFICIENCY;

MESFET DEVICES;

EID: 0030673591     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)