Effects of Doping Profile on the Performance of BARITT Devices

IEEE Transactions on Electron Devices

Volumn 24, Issue 9, 1977, Pages 1154-1163

  Nguyen Ba, Hien ^a   Haddad, George I ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS - DOPING;

BARITT DEVICES;

SEMICONDUCTOR DEVICES, TRANSIT TIME;

EID: 0017539237     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1977.18899     Document Type: Article

References (9)

1. G. T. Wright “Punch-through transit time oscillator,” Electron. Lett., vol. 4, pp. 543–544, Nov. 1968.
2. D. J. Coleman, Jr., and S. M. Sze, “A low-noise metal-semiconductor-metal (MSM) microwave oscillator,” Bell Syst. Tech. J., vol. 50, pp. 1695–1699, May—June 1971.
3. C. P. Snapp and P. Weissglas “On the microwave activity of punchthrough injector transit-time structure,” IEEE Trans. Electron Devices, vol. ED-19, pp. 1109–1118, Oct. 1972.
4. G. T. Wright “Small-signal characteristics of semiconductor punchthrough injection and transit time diodes,” Solid-State Electron., vol. 16, pp. 903–912, Aug. 1973.
5. G. I. Haddad, “Basic principles and simple design procedures of BARITT devices,” EPL Memo No. 75-2-005030, Electron Physics Laboratory, The University of Michigan, Ann Arbor, June 1975.
6. S. P. Kwok and G. I. Haddad “Power limitations in BARITT devices,” Solid-State Electron., vol. 19, pp. 795–807, Sept. 1976.
7. S. P. Kwok, H. Nguyen-Ba, and G. I. Haddad, “Properties and potential of BARITT devices,” in IEEE Int. Solid-State Circuits Conf. Digest, Philadelphia, PA, pp. 180–181, Feb. 1974.
8. J. R. East, H. Nguyen-Ba, and G. I. Haddad, “BARITT devices for self-mixed doppler radar applications,” in IEEE Int. Microwave Symp. Digest, Cherry Hill, NJ, pp. 43–44, June 1976.
9. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1969, p. 97.