-
1
-
-
84918018403
-
A proposed punch-through, microwave negative-resistance resistance diode
-
Aug.
-
H. W. Ruegg, “A proposed punch-through, microwave negative-resistance resistance diode,” IEEE Trans. Electron Devices, vol. ED-15, pp. 577–585, Aug. 1968.
-
(1968)
IEEE Trans. Electron Devices
, vol.ED-15
, pp. 577-585
-
-
Ruegg, H.W.1
-
2
-
-
8544268644
-
Analysis of punch-through-injection through-injection for a transit-time negative resistance diode
-
Jan.
-
U. B. Sheorey, I. Lundstrom, and E. A. Ash, “Analysis of punch-through-injection through-injection for a transit-time negative resistance diode,” Iit. J. Electron., vol. 30, pp. 19–32, Jan. 1971.
-
(1971)
Iit. J. Electron.
, vol.30
, pp. 19-32
-
-
Sheorey, U.B.1
Lundstrom, I.2
Ash, E.A.3
-
3
-
-
0015573625
-
Microwave BARITT diodes, part I: Large-signal performance
-
Jan.
-
W. Harth and M. Claassen, “Microwave BARITT diodes, part I: Large-signal performance,” Nachrichtentech. Z., vol. 26, pp. 26–29, Jan. 1973.
-
(1973)
Nachrichtentech. Z.
, vol.26
, pp. 26-29
-
-
Harth, W.1
Claassen, M.2
-
4
-
-
0015602298
-
Large-signal analysis on negative-resistance diode due to punch-through-injection and transit-time time effect
-
Mar.
-
K. Kawarada and Y. Mizushima, “Large-signal analysis on negative-resistance diode due to punch-through-injection and transit-time time effect,” Japan J. Appl. Phys., vol. 12, pp. 423–433, Mar. 1973.
-
(1973)
Japan J. Appl. Phys.
, vol.12
, pp. 423-433
-
-
Kawarada, K.1
Mizushima, Y.2
-
5
-
-
0015973137
-
Large-signal analysis of silicon BARITT diodes
-
Jan.
-
M. Matsumura, “Large-signal analysis of silicon BARITT diodes,” NEC Res. Development, no. 32, pp. 1–11, Jan. 1974.
-
(1974)
NEC Res. Development
, Issue.32
, pp. 1-11
-
-
Matsumura, M.1
-
6
-
-
0016059288
-
BARITT-diode large-signal performance
-
May 16
-
J. A. C. Stewart, “BARITT-diode large-signal performance,” Electron. Lett., vol. 10, pp. 193–194, May 16, 1974.
-
(1974)
Electron. Lett.
, vol.10
, pp. 193-194
-
-
Stewart, J.A.C.1
-
7
-
-
0016064010
-
The nonlinear characteristics and efficiency of injection-drift diodes
-
May
-
A. S. Tager, V. B. Sulimov, and A. K. Balyko, “The nonlinear characteristics and efficiency of injection-drift diodes,” Radio Eng. Electron. Phys., vol. 19(5), pp. 111–119, May 1974.
-
(1974)
Radio Eng. Electron. Phys.
, vol.19
, Issue.5
, pp. 111-119
-
-
Tager, A.S.1
Sulimov, V.B.2
Balyko, A.K.3
-
8
-
-
0016971762
-
A simplified theory of the BARITT silicon microwave diode
-
July
-
G. T. Wright, “A simplified theory of the BARITT silicon microwave diode,” Solid-State Electron., vol. 19, pp. 615–623, July 1976.
-
(1976)
Solid-State Electron.
, vol.19
, pp. 615-623
-
-
Wright, G.T.1
-
9
-
-
0016971751
-
Large-signal analysis of the silicon pnp-BARITT diode
-
July
-
M. Karasek, “Large-signal analysis of the silicon pnp-BARITT diode,” Solid-State Electron., vol. 19, pp. 625–631, July 1976.
-
(1976)
Solid-State Electron.
, vol.19
, pp. 625-631
-
-
Karasek, M.1
-
10
-
-
0016998524
-
Power limitations in BARITT devices
-
Sept.
-
S. P. Kwok and G. I. Haddad, “Power limitations in BARITT devices,” Solid-State Electron., vol. 19, pp. 795–807, Sept. 1976.
-
(1976)
Solid-State Electron.
, vol.19
, pp. 795-807
-
-
Kwok, S.P.1
Haddad, G.I.2
-
11
-
-
0015414685
-
On the microwave activity of punchthrough injection transit-time structures
-
Oct.
-
C. P. Snapp and P. Weissglass, “On the microwave activity of punchthrough injection transit-time structures,” IEEE Trans. Electron Devices, vol. ED-19, pp. 1109–1118, Oct. 1972.
-
(1972)
IEEE Trans. Electron Devices
, vol.ED-19
, pp. 1109-1118
-
-
Snapp, C.P.1
Weissglass, P.2
-
12
-
-
84939396263
-
Experimental studies on large-signal operation of BARITT-diode amplifiers
-
May
-
K. Okazaki, N. S. Chang, and Y. Matsu, “Experimental studies on large-signal operation of BARITT-diode amplifiers,” Electron. Commun. Japan, vol. 58-B, pp. 75–82, May 1975.
-
(1975)
Electron. Commun. Japan
, vol.58-B
, pp. 75-82
-
-
Okazaki, K.1
Chang, N.S.2
Matsu, Y.3
-
13
-
-
84977731090
-
A lumped-distributed small-signal model for a class of transit-time semiconductor devices
-
Oct.
-
N. Quang, “A lumped-distributed small-signal model for a class of transit-time semiconductor devices,” Mt. J. Circuit Them Appl., vol. 4, pp. 357–370, Oct.1976. 1976.
-
(1976)
Mt. J. Circuit Them Appl.
, vol.4
, pp. 357-370
-
-
Quang, N.1
-
14
-
-
0016986217
-
A frequency-independent large-signal equivalent circuit for a BARITT diode and its application to an amplifier
-
Aug.
-
K. Okazaki, N. S. Chang, and Y. Matsuo, “A frequency-independent large-signal equivalent circuit for a BARITT diode and its application to an amplifier,” IEEE Trans. Microwave Theory Tech. vol. MTT-24, pp. 527–529, Aug. 1976.
-
(1976)
IEEE Trans. Microwave Theory Tech
, vol.MTT-24
, pp. 527-529
-
-
Okazaki, K.1
Chang, N.S.2
Matsuo, Y.3
-
16
-
-
0347787123
-
New broad-band equivalent circuit determination for Gunn diodes
-
Nov.
-
I. W. Pence, Jr., and P. J. Khan, “New broad-band equivalent circuit determination for Gunn diodes,” IEEE Trans. Microwave Theory Tech., vol. MTT-18, pp. 784–789, Nov. 1970.
-
(1970)
IEEE Trans. Microwave Theory Tech.
, vol.MTT-18
, pp. 784-789
-
-
Pence, I.W.1
Khan, P.J.2
-
17
-
-
0016035562
-
De-embedding and unterminating
-
Mar.
-
R. F. Bauer and P. Penfield, Jr., “De-embedding and unterminating,” ing,” IEEE Trans. Microwave Theory Tech., vol. MTT-22, pp. 282–288, Mar. 1974.
-
(1974)
IEEE Trans. Microwave Theory Tech.
, vol.MTT-22
, pp. 282-288
-
-
Bauer, R.F.1
Penfield, P.2
-
18
-
-
0015330171
-
Transit-time oscillations in BARITT diodes
-
Apr.
-
D. J. Coleman, “Transit-time oscillations in BARITT diodes,” J. Appl. Phys., vol. 43, pp. 1812–1818, Apr. 1972.
-
(1972)
J. Appl. Phys.
, vol.43
, pp. 1812-1818
-
-
Coleman, D.J.1
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