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Solid State Electronics

Volumn 25, Issue 9, 1982, Pages 943-945

Optimum baritt structure

(2) Luryi, S a Kazarinov, R F a

a LUCENT TECHNOLOGIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, TRANSIT TIME;

EID: 0020188546 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1101(82)90185-X Document Type: Article

Times cited : (6)

References (8)

1
- 0004005306
- 2nd Edn, Wiley-Interscience, New York, Chap. 10
- (1981) Physics of Semiconductor Devices
- Sze¹

2
- 0017478320
- (1977) Solid-St. Electron. , vol.20 , pp. 291
- Eknoyan¹ Yang² Sze³

3
- 0344433772
- Planar-doped barriers in GaAs by molecular beam epitaxy
- (1980) Electronics Letters , vol.16 , pp. 837
- Malik¹ Board² Wood³ Eastman⁴ AuCoin⁵ Ross⁶

4
- 84916331951
- R. Kazarinov and S. Luryi, to be published

5
- 36749119663
- (1981) Appl. Phys. Lett. , vol.38 , pp. 810
- Kazarinov¹ Luryi²

6
- 0008493525
- THE AVALANCHE-TRANSIT DIODE AND ITS USE IN MICROWAVES
- (1967) Soviet Physics Uspekhi , vol.9 , pp. 892
- Tager¹

7
- 0014564288
- (1969) Rev. Techn. Thompson-CSF , vol.1 , pp. 309
- Delagebeaudeuf¹

8
- 0015680988
- Power limitation of punchthrough injection transit-time oscillators
- (1973) Electronics Letters , vol.9 , pp. 538
- Delagebeaudeuf¹ Lacombe²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.