Microwave BARITT diode with retarding field-An investigation

Solid State Electronics

Volumn 20, Issue 4, 1977, Pages 285-289

  Eknoyan, O ^a   Sze, S M ^b   Yang, E S ^c  

^a TEXAS A AND M UNIVERSITY   (United States)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c Och Spine at New York Presbyterian Hospitals   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARITT DIODE;

SEMICONDUCTOR DIODES, TRANSIT TIME;

EID: 0017478369     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(77)90109-5     Document Type: Article

References (25)

1. Transistor transit-time oscillator
2. Efficiency of the transistor transit-time oscillator
3. ‘Punch-through’ transit-time oscillator
4. A proposed punch-through microwave negative-resistance diode
5. A Low-Noise Metal-Semiconductor-Metal (MSM) Microwave Oscillator
6. Experimental comparison of silicon p+-n-p+ and Cr-n-p+ transit-time oscillators
7. Local-oscillator noise in a silicon pt–n–p+ microwave diode source
8. On the microwave activity of punchthrough injection transit-time structures
9. Transit-Time Oscillations in BARITT Diodes
10. Small-signal analysis of punch-through injection microwave devices
11. Calculation of intrinsic transport parameters of a double-diffused transistor