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Solid State Electronics

Volumn 19, Issue 9, 1976, Pages 795-807

Power limitations in BARITT devices

(2) Kwok, S P a Haddad, G I a

a UNIVERSITY OF MICHIGAN (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARITT DEVICES;

SEMICONDUCTOR DEVICES, TRANSIT TIME;

EID: 0016998524 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1101(76)90158-1 Document Type: Article

Times cited : (12)

References (19)

1
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- Rüegg¹

2
- 0015414685
- On the microwave activity of punchthrough injection transit-time structures
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- Snapp¹ Weissglas²

3
- 84918003587
- F.M.-noise and bias-current fluctuations of a silicon Pd-n-p+ microwave oscillator
- (1972) Electronics Letters , vol.8 , pp. 158
- Helmcke¹ Herbst² Claassen³ Harth⁴

4
- 84918978488
- Properties and Potential of BARITT Devices
- Electron Physics Laboratory, The University of Michigan, Ann Arbor
- (1974) Tech. Report No. 133
- Kwok¹

5
- 84916389355
- Large-signal analysis of a silicon Read diode oscillator
- (1969) IEEE Transactions on Electron Devices , vol.16 ED , pp. 64
- Scharfetter¹ Gummel²

6
- 0015210736
- (1971) Electronics Letters , vol.7 , pp. 667
- Haus¹ Statz² Pucel³

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- Coleman¹

8
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- Weller¹

9
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- Chu¹ Sze²

10
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- Wright¹

11
- 0015630675
- Small-signal analysis of punch-through injection microwave devices
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- Sjölund¹

12
- 0015750908
- Washington, D.C.
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- Oakes¹ Lee²

13
- 84944485870
- A Proposed High-Frequency, Negative-Resistance Diode
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14
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15
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- Chapman and Hall, London
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17
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18
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- Suppl.
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- Logan¹ Sze²

19
- 84918978485
- Philadelphia, PA
- (1974) Presented at the 1974 Int. Solid-State Circuits Conf.
- Kwok¹ Nguyen-Ba² Haddad³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.