The influence of capture of the injected current carriers on the characteristics of baritt diodes

Solid-State Electronics

Volumn 20, Issue 6, 1977, Pages 491-497

  Harutunian, V M ^a,b   Buniatian, V V ^a,b  

^a INSTITUTE OF ORGANIC CHEMISTRY   (Armenia)

^b STATE ENGINEERING UNIVERSITY OF ARMENIA   (Armenia)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, TRANSIT TIME;

EID: 0017496991     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(77)81005-8     Document Type: Article

References (31)

1. Negative Resistance Arising from Transit Time in Semiconductor Diodes
2. A Proposed High-Frequency, Negative-Resistance Diode
3. A proposed punch-through microwave negative-resistance diode
4. Transistor transit-time oscillator
5. ‘Punch-through’ transit-time oscillator
6. Experimental comparison of silicon p+-n-p+ and Cr-n-p+ transit-time oscillators
7. A Low-Noise Metal-Semiconductor-Metal (MSM) Microwave Oscillator
8. Transit-time oscillator with velocity-limited injection
9. Punchthrough oscillator—new microwave solid-state source
10. On the microwave activity of punchthrough injection transit-time structures