Effect of temperature on Baritt diode large signal performance

Solid State Electronics

Volumn 21, Issue 9, 1978, Pages 1179-1181

  Karasek, Miroslav ^a  

^a INSTITUTE OF PHOTONICS AND ELECTRONICS   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 8544224985     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(78)90360-X     Document Type: Article

References (5)

1. Simulation of Pt-n-p+ silicon punchthrough device
2. On the microwave activity of punchthrough injection transit-time structures
3. The effect of temperature on the operation of an IMPATT diode