Self-assembled patterning of ultrathin silicides by local oxidation

MRS Bulletin

Volumn 24, Issue 8, 1999, Pages 31-35

  Mantl, S ^a   Zhao, Q T ^a   Kabius, B ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; THERMAL DIFFUSION IN SOLIDS; THERMOOXIDATION;

SELF-ASSEMBLED PATTERNING; ULTRATHIN SILICIDES;

ULTRATHIN FILMS;

EID: 0032652291     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/S0883769400052878     Document Type: Article

References (28)

1. Y. Xia and G.M. Whitesides, Angew. Chem. Int. Ed. 37 (1998) p. 550.
2. B. Rahmati, W. Jäger, H. Trinkaus, R. Loo, L. Vescan, and H. Lüth, Appl. Phys. A 62 (1996) p. 575, L. Vescan, J. Cryst. Growth 194 (1998) p. 173.
3. B. Rahmati, W. Jäger, H. Trinkaus, R. Loo, L. Vescan, and H. Lüth, Appl. Phys. A 62 (1996) p. 575, L. Vescan, J. Cryst. Growth 194 (1998) p. 173.
4. J. Tersoff, C. Teichert, and M.G. Lagally, Phys. Rev. Lett. 76 (1996) p. 1675.
5. R.A. Kiehl, M. Yamaguchi, O. Ueda, N. Horiguchi, and N. Yokoyama, Appl. Phys. Lett. 68 (4) (1996) p. 478.
6. S. Mantl, M. Dolle, St. Mesters, P.F.P. Fichtner, and H.L. Bay, Appl. Phys. Lett. 67 (1995) p. 3459.
7. Q.T. Zhao, F. Klinkhammer, M. Dolle, L. Kappius, and S. Mantl, Appl. Phys. Lett. 74 (3) (1999) p. 454.
8. J.R. Tucker, C. Wang, and T.-C. Shen, Nanotechnology 7 (1996) p. 275.
9. C. Wang, J.P. Snyder, and J.R. Tucker, Appl. Phys. Lett. 74 (8) (1999) p. 1174.
10. D. Lenssen, and S. Mantl, Appl. Phys. Lett. 71 (24) (1997) p. 3540; S. Mantl, Mat. Sci. Rep. 8 (1992) p. 1.
11. D. Lenssen, and S. Mantl, Appl. Phys. Lett. 71 (24) (1997) p. 3540; S. Mantl, Mat. Sci. Rep. 8 (1992) p. 1.
12. th Int. Conf. on Ion Beam Modification of Materials, edited by J.S. Williams, R.G. Elliman, and M.C. Ridgway (Elsevier, Amsterdam, 1996) p. 933.
13. K. Maex, Mat. Sci. Eng. R 11 (1993) p. 53.
14. P. Pellegrini, (Mat. Res. Soc. Proc. 320, Pittsburgh, 1994) p. 27.
15. R.T. Tung, in Silicon-Molecular Beam Epitaxy, edited by E. Kasper and J.C. Bean (CRC Press, Boca Raton, FL, 1988) p. 13.
16. S. Mantl and H.L. Bay, Appl. Phys. Lett. 61 (1992) p. 267.
17. S. Mantl, J. Phys. D: Appl. Phys. 31 (1998) p. 1.
18. H. Jiang, C.S. Peterson, and M.-A. Nicolet, Thin Solid Films 140 (1986) p. 115.
19. B.E. Deal, and A.S. Grove, J. Appl. Phys. 36 (1965) p. 3770.
20. S. Wolf and R.N. Tauber, Silicon Processing for the VLSI Era 1 (Lattice Press, Sunset Beach, CA, 1989).
21. S. Mantl, L. Kappius, A. Antons, M. Löken, F. Klinkhammer, M. Dolle, Q.T. Zhao, S. Mesters, Ch. Buchal, H.L. Bay, B. Kabius, H. Trinkaus, and K.H. Heinig, in Advanced Interconnects and Contact Materials and Processes for future ICs, (Mat. Res. Soc. Symp. Proc. 514, Warrendale, PA, 1998) in press.
22. A. Antons, K.H. Heinig, H. Trinkaus, F. Klinkhammer, S. Mesters, and S. Mantl (unpublished).
23. S. Reiss and K.H. Heinig, Nuclear Instr. Methods Phys. Res., Sect. B 84 (1994) p. 229; S. Reiss and K.H. Heinig, Nuclear Instr. Methods Phys. Res., Sect. B 102 (1995) p. 256.
24. S. Reiss and K.H. Heinig, Nuclear Instr. Methods Phys. Res., Sect. B 84 (1994) p. 229; S. Reiss and K.H. Heinig, Nuclear Instr. Methods Phys. Res., Sect. B 102 (1995) p. 256.
25. M. Haider, S. Uhlemann, E. Schwan, H. Rose, B. Kabius, K. Urban, Nature 392 (1998) p. 768.
26. M. Haider, H. Rose, S. Uhlemann, E. Schwan, B. Kabius, K. Urban, Ultramicroscopy 74 (1998) p. 53.
27. J.R. Tucker, C. Wang, and P.S. Carney, Appl. Phys. Lett. 65 (1994) p. 618.
28. C.-K. Huang, W.E. Zhang, and C.H. Yang, IEEE Trans. Electr. Dev. 45 (1998) p. 842.