Defects and diffusion in silicon: An overview

Materials Research Society Symposium - Proceedings

Volumn 568, Issue , 1999, Pages 79-90

  Cowern, N E B ^a   Manning, G ^a   Stolk, P A ^a   Theunissen, M J J ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; DIFFUSION IN GASES; DIFFUSION IN SOLIDS; POINT DEFECTS; SEMICONDUCTOR DOPING;

TRANSIENT ENHANCED DIFFUSION (TED);

SEMICONDUCTING SILICON;

EID: 0032639196     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-568-79     Document Type: Article

References (38)

1. P.M. Fahey, P.B. Griffin, and J.D. Plummer, Rev. Mod. Phys. 61, 289 (1989).
2. S.M. Hu, Materials Science and Engineering R13, 105 (1994).
3. A. Ural, P.B. Griffin, and J.D. Plummer, J. Apl. Phys. 85, 6440 (1999).
4. H. Bracht, E.E. Haller, and R. Clark-Phelps, Phys. Rev. Lett. 81, 393 (1998).
5. Recent ab initio calculations suggest that for the important case of B diffusion, the migrating species is the B-I pair (B. Sadigh, T.J. Lenosky, S.K. Theiss, M.-J. Caturla, T. Diaz de la Rubia, and M.A. Foad; unpublished).
6. N.E.B. Cowern, K.T.F. Janssen, G.F.A. van de Walle, and D.J. Gravesteijn, Phys. Rev. Lett. 65, 2434 (1990).
7. N.E.B. Cowem, G.F.A. van de Walle, D.J. Gravesteijn, and C.J. Vriezema, Phys. Rev. Lett. 67, 212 (1991).
8. N.E.B. Cowern, G. Mannino, P.A. Stolk, F. Roozeboom, H.G.A. Huizing, J.G.M. van Berkum, F. Cristiano, A. Claverie, and M. Jaraíz, Phys. Rev. Lett. 82, 4460 (1999).
9. R.B. Fair, in Impurity Doping Processes in Silicon, edited by F.F.Y. Wang (North-Holland, Amsterdam, 1991), page 315.
10. H. Bracht, N.A. Stolwijk, and H. Mehrer, Phys. Rev. B 52, 16542 (1995).
11. I. Bork and A. v. Schwerin, Mat. Res. Soc. Symp. Proc. 532, 29 (1998).
12. A. Nylandsted Larsen, K. Kyllesbech Larsen, P.E. Andersen, and B.G. Svensson, J. Appl. Phys. 73, 691 (1993).
13. R. Scholtz, U. Gösele, J.Y. Huh, and T.Y. Tan, Appl. Phys. Lett. 72, 200 (1998).
14. A. Agarwal, H.-J. Gossmann, D.J. Eaglesham, D.C. Jacobson, T.E. Haynes, J. Jackson, Yu.E. Erokhin, and J.M. Poate, Proc. 4th Int. Workshop on Measurement, Characterization and Modeling of Ultra-Shallow Doping Profiles in Semiconductors (Research Triangle Park, North Carolina, 1997).
15. A. Agarwal, H.-J. Gossmann, D.J. Eaglesham, S.B. Hemer, A.T. Fiory, and T.E. Haynes, Appl. Phys. Lett. 74, 2435 (1999);
16. A. Agarwal, H.-J. Gossmann, and D.J. Eaglesham, Appl. Phys. Lett. 74, 2331 (1999).
17. S.T. Dunham, S. Chakravathi, and A.H. Gencer, Proc. International Electron Devices Meeting (San Francisco, CA, 6-9 Dec., 1998).
18. N.E.B. Cowem, M.J.J. Theunissen, F. Roozeboom, and J.G.M. van Berkum, Appl. Phys. Lett, (in press).
19. TSUPREM4 User Manual (Avant! TCAD Business Unit, CA, 1998).
20. P.A. Stolk, H.-J. Gossmann, D.J. Eaglesham, D.C. Jacobson, C.S. Rafferty, G.H. Gilmer, M. Jaraiz, J.M. Poate, H.S. Luftman, and T.E. Haynes, J. Appl. Phys. 81, 6031 (1997).
21. A. Claverie, G. Ben Assayag, C. Bonafos, F. Cristiano, B. Colombeau, M. Omri, and B. de Mauduit, submitted to Materials Science in Semiconductor Engineering; A. Claverie, these Proceedings.
22. M. Kohyama and S. Takeda, Phys. Rev. B 46, 12305 (1992); ibid.,
23. Phys. Rev. B 51, 13111 (1995).
24. D.J. Eaglesham, P.A. Stolk, H.-J. Gossmann, and J.M. Poate, Appl. Phys. Lett. 65, 2305 (1994).
25. N.E.B. Cowern, G.F.A. van de Walle, P.C. Zalm, and D.W.E. Vandenhoudt, Appl. Phys. Lett. 65, 2981 (1994).
26. H.G.A. Huizing, C.C.G. Visser, N.E.B. Cowern, P.A. Stolk, and R.C.M. de Kruif, Appl. Phys. Lett. 69, 1211 (1996).
27. H.S. Chao, P.B. Griffin, J.D. Plummer and C.S. Rafferty, Appl. Phys. Lett. 69, 2113 (1996).
28. Jinghong Li and K.S. Jones, Appl. Phys. Lett. 73, 3748 (1998).
29. Y.H. Lee, Appl. Phys. Lett. 73, 1119 (1998).
30. N. Arai, S. Takeda, and M. Kohyama, Phys. Rev. Lett. 78, 4265 (1997).
31. J.L. Benton, K. Halliburton, S. Libertino, D.J. Eaglesham, and S. Coffa, J. Appl. Phys. 84, 4749 (1998).
32. G. Mannino, N.E.B. Cowern, P.A. Stolk, H.G.A. Huizing, F. Roozeboom, J.G.M. van Berkum, W. de Boer, A. Claverie, F. Cristiona, and M. Jaraíz (these Proceedings).
33. M. Jaraiz, L. Pelaz, E. Rubio, J. Barbolla, G.H. Gilmer, D.J. Eaglesham, H.J. Gossmann, and J.M. Poate, Mat. Res. Soc. Symp. Proc. 532, 43 (1998).
34. N. Cuendet, T. Halicioglu, and W.A. Tiller, Appl. Phys. Lett. 68, 19 (1996).
35. A. La Magna, S. Coffa, and S. Libertino, in 'Silicon Front-End Technology: Materials Processing and Modeling', MRS Spring Meeting, San Francisco, 1999, paper S5.4.
36. L. Pelaz, M. Jaraiz, G.H. Gilmer, H.-J. Gossmann, C.S. Rafferty, D.J. Eaglesham, and J.M. Poate, Appl. Phys. Lett. 70, 2285 (1997).
37. M.J. Caturla, M.D. Johnson, and T. Diaz de la Rubia, Appl. Phys. Lett. 72, 2736 (1998).
38. P.M. Rousseau, P.B. Griffin, W.T. Fang, and J.D. Plummer, J. Appl. Phys. 84, 3593 (1998).