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Volumn 69, Issue 9, 1996, Pages 1211-1213

Ultrafast interstitial injection during transient enhanced diffusion of boron in silicon

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001547563     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117414     Document Type: Article
Times cited : (37)

References (12)
  • 5
    • 0002734525 scopus 로고
    • edited by F. F. Y. Wang North-Holland, New York
    • R. B. Fair, in Impurity Doping Processes in Silicon, edited by F. F. Y. Wang (North-Holland, New York, 1981), p. 315.
    • (1981) Impurity Doping Processes in Silicon , pp. 315
    • Fair, R.B.1
  • 6
    • 85033851300 scopus 로고    scopus 로고
    • note
    • Possible errors in the absolute temperature and time scale give an accuracy of a factor 2 for the extracted diffusion coefficients. The relative error in comparing individual data points, however, is much smaller (<20%).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.