Microstructure, vibrational and electronic properties of GaN grown by molecular beam epitaxy on Al2O3(0001) and 6H-SiC(0001)

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 4, 1997, Pages 1121-1127

  Freundt, D ^a   Holz, D ^a   Luth H ^a   Romani, M ^b   Rizzi, A ^b   Gerthsen, D ^c  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^c Lab für Elektronenmikroskopie   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343893249     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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