Device modeling of high performance diamond MESFETs using p-type surface semiconductive layers

Diamond and Related Materials

Volumn 6, Issue 5-7, 1997, Pages 865-868

  Noda, H ^a   Hokazono, A ^a   Kawarada, H ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

Device; Hydrogen; Interface; Modeling

Indexed keywords

EID: 0000658501     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(96)00725-x     Document Type: Article

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