MESFETs and MOSFETs on hydrogen-terminated diamond surfaces

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 977-980

  Tsugawa, K ^a   Hokazono, A ^a   Noda, H ^a   Kitatani, K ^a   Morita, K ^a   Kawarada, H ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

Hydrogen Terminated Diamond Surface; MESFET; MOSFET; Surface Channel; Surface Semiconductive Layer

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIAMOND FILMS; DIFFUSION IN SOLIDS; GATES (TRANSISTOR); MATHEMATICAL MODELS; MESFET DEVICES; MOSFET DEVICES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR INSULATOR BOUNDARIES; TRANSCONDUCTANCE;

DRIFT DIFFUSION DEVICES;

SEMICONDUCTING DIAMONDS;

EID: 0031701671     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.977     Document Type: Article

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