Application and device modeling of diamond FET using surface semiconductive layers

Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)

Volumn 81, Issue 7, 1998, Pages 19-27

  Tsugawa, K ^a   Noda, H ^a   Hokazono, A ^a   Kitatani, K ^a   Monta, K ^a   Kawarada, H ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

Hydrogen terminated diamond surface; MESFET; MOSFET; p type conductive layer; Surface channel

Indexed keywords

COMPUTER SIMULATION; DIAMONDS; MOSFET DEVICES; SEMICONDUCTOR DEVICE MODELS; SURFACES;

P-TYPE CONDUCTIVE LAYER;

MESFET DEVICES;

EID: 0032120752     PISSN: 8756663X     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1520-6432(199807)81:7<19::AID-ECJB3>3.0.CO;2-Y     Document Type: Article

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