Surface morphology and surface p-channel field effect transistor on the heteroepitaxial diamond deposited on inclined β-SiC(001) surfaces

Applied Physics Letters

Volumn 72, Issue 15, 1998, Pages 1878-1880

  Kawarada, H ^a   Wild, C ^a   Herres, N ^a   Koidl, P ^a   Mizuochi, Y ^b   Hokazono, A ^b   Nagasawa, H ^c  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b WASEDA UNIVERSITY   (Japan)

^c HOYA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000989778     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121213     Document Type: Article

References (20)

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