Enhancement/depletion surface channel field effect transistors of diamond and their logic circuits

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 12 A, 1997, Pages 7133-7139

  Hokazono, Akira ^a   Kawarada, Hiroshi ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

As grown surface; Depletion mode MESFET; Diamond; E D type logic circuit; Electronegativity; Enhancement mode MESFET; Hydrogen termination; Microwave plasma assisted CVD; Schottky barrier height; Threshold voltage

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CONDUCTIVE MATERIALS; DIAMOND FILMS; ELECTRODES; GATES (TRANSISTOR); HYDROGEN; INTEGRATED CIRCUIT MANUFACTURE; LOGIC CIRCUITS; SEMICONDUCTOR GROWTH; TRANSCONDUCTANCE;

DEPLETION MODE; ELECTRONEGATIVITY; ENHANCEMENT MODE; SCHOTTKY BARRIER HEIGHT; THRESHOLD VOLTAGE;

MESFET DEVICES;

EID: 0031358780     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.7133     Document Type: Article

References (21)

1. M. W. Geis, D. D. Rathman, D. J. Ehrilich, R. A. Murphy and W. T. Lindley: IEEE Electron Device Lett. 8 (1987) 341.
2. G. Sh. Gildenblat, S. A. Grot, C. R. Wronski, A. R. Badzian, T. Badzian and R. Messier: Appl. Phys. Lett. 53 (1988) 586.
3. H. Shiomi, Y. Nishibayashi and N. Fujimori: Jpn. J. Appl. Phys. 28 (1989) L2153.
4. W. Tsai, M. Delfino, D. Hodul, M. Riaziat, L. Y. Ching, G. Reynolds and C. B. Cooper, III: IEEE Electron Device Lett. 12 (1991) 157.
5. H. Shiomi, Y. Nishibayashi, N. Toda and S. Shikata: IEEE Electron Device Lett. 16 (1995) 36.
6. G. Sh. Gildenblat, S. A. Grot, C. W. Hatfield and A. R. Badzian: IEEE Electron Device Lett. 12 (1991) 37.
7. C. R. Zeisse, C. A. Hewett, R. Nguyen, J. R. Zeidler and R. G. Wilson: IEEE Electron Device Lett. 12 (1991) 602.
8. D. L. Dreifus, A. J. Tessmer, J. S. Holms and L. S. Plano: Second Int. High Temperature Electronics Conf, Charlotte, N.C. USA (1994) p. 29.
9. J. S. Holms, A. J. Tessmer and D. L. Dreifus: Second Int. High Temperature Electronics Conf., Charlotte, N.C. USA (1994) p. 35.
10. M. Itoh, A. Hokazono, H. Noda and H. Kawarada: Silicon Carbide and Related Materials, (Institute of Physics Publishing, Bristol, 1995) Inst. Phys. Conf. Ser. No. 142 p. 1095.
11. H. Kawarada, M. Itoh and A. Hokazono: Jpn. J. Appl. Phys. 35 (1996) L1165.
12. K. Hayashi, S. Yamanaka, H. Okushi and K. Kajimura: Appl. Phys. Lett. 68 (1996) 376.
13. H. Kawarada, H. Sasaki and A. Sato: Phys. Rev. B 52 (1995) 11351.
14. H. Kawarada, M. Aoki and M. Ito: Appl. Phys. Lett. 65 (1994) 1563.
15. M. Itoh and H. Kawarada: Jpn. J. Appl. Phys. 34 (1995) 4677.
16. M. Aoki and H. Kawarada: Jpn. J. Appl. Phys. 33 (1994) L708.
17. V. S. Vavilov, V. V. Krasnopevtsev, Yu. V. Milyutin, A. E. Gorodetsky and A. P. Zakharov: Rad. Eff. 22 (1974) 141.
18. J. F. Prins: Appl. Phys. Lett. 41 (1982) 950.
19. A. Hokazono, T. Ishikura, K. Nakamura, S. Yamashita and H. Kawarada: Diamond & Relat. Mater. 6 (1997) 339.
20. H. Kawarada: Surf. Sci. Rep. 26 (1996) 205.
21. W. Mönch: Phys. Rev. Lett. 58 (1987) 1260.