Highly uniform AlGaAs/GaAs and InGaAs(P)/InP structures grown in a multiwafer vertical rotating susceptor MOVPE reactor

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 83-87

  Zhang, X ^a   Moerman, I ^a   Sys, C ^a   Demeester, P ^a   Crawley, J A ^b   Thrush, E J ^b  

^a GHENT UNIVERSITY   (Belgium)

^b THOMAS SWAN AND CO LTD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; THICKNESS MEASUREMENT;

VERTICAL ROTATING SUSCEPTOR MOVPE REACTOR;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030714786     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00603-3     Document Type: Article

References (2)

1. P.M. Gadgil, J. Electron. Mater. 22 (1993) 171.
2. S.M. Vernon, P.C. Colter, D.D. McNulty, S.J. Hogan, D.W. Weyburne and B.S. Ahern, Proc. 6th Int. Conf. on Indium Phosphide and Related Materials, March 27-31, 1994, Santa Barbara, California, USA, p. 137.