Growth study of chemical beam epitaxy of GaNxP1-x using NH3 and tertiarybutylphosphine

Journal of Crystal Growth

Volumn 164, Issue 1-4, 1996, Pages 180-184

  Li, N Y ^a   Wong, W S ^a   Tomich, D H ^a   Dong, H K ^a   Solomon, J S ^b   Grant, J T ^b   Tu, C W ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF DAYTON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CHEMICAL BEAM EPITAXY; CRYSTAL LATTICES; GALLIUM; ION IMPLANTATION; MONITORING; OSCILLATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;

CRACKING EFFICIENCY; INCORPORATION RATES; LATTICE MATCH; SINGLE CRACKER; TERTIARYBUTYLPHOSPHINE; TRIETHYLGALLIUM; X RAY ROCKING CURVE;

GALLIUM ALLOYS;

EID: 0030193201     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)01027-0     Document Type: Article

References (16)

1. S. Nakamura, T. Mukai and M. Senoh, Appl. Phys. Lett. 64 (1994) 1687.
2. M. Kondow, K. Uomi, K. Hosomi and T. Mozume, J. Crystal Growth, to be published.
3. C.T. Foxon, T.S. Cheng, S.V. Novikov, D.E. Lacklison, L.C. Jenkins, D. Johnston, J.W. Orton, S.E. Hooper, N. Baba-Ali, T.L. Tansley and V.V. Tret'yakov, J. Crystal Growth 150 (1995) 892.
4. M. Kondow, K. Uomi, K. Hosomi and T. Mozume, Jpn. J. Appl. Phys. 33 (1994) L1056.
5. J.N. Baillargeon, K.Y. Cheng, G.E. Hofler, P.J. Pearah and K.C. Hsieh, Appl. Phys. Lett. 60 (1992) 2540.
6. J.N. Baillargeon and K.Y. Cheng, J. Appl. Phys. 70 (1991) 1841.
7. X. Yang, Z. Lin, Z. Li, L. Wu and C. Mao, J. Appl. Phys. 77 (1995) 5553.
8. Y. Ueta, H. Sato, A. Sakai and M. Fukui, J. Crystal Growth 145 (1994) 203.
9. X. Liu, S.G. Bishop, J.N. Baillargeon and K.Y. Cheng, Appl. Phys. Lett. 63 (1993) 208.
10. S. Miyoshi, H. Yaguchi, K. Onable, R. Ito and Y. Shiraki, J. Crystal Growth 145 (1994) 87.
11. S. Miyoshi, H. Yaguchi, K. Onable, Y. Shiraki and R. Ito, Inst. Phys. Conf. Ser. 141 (1995) 97.
12. J.N. Baillargeon, K.Y. Cheng, S.L. Jackson and G.E. Stillman, J. Appl. Phys. 69 (1991) 8025.
13. E.A. Beam III, T.S. Henderson, A.C. Seabough and J.Y. Yang, J. Crystal Growth 116 (1992) 432.
14. A. Wakahara, K. Hirano, X.L. Wang and A. Sasaki, Inst. Phys. Conf. Ser. 136 (1994) 607.
15. T.P. Chin, B.W. Liang, H.Q. Hou, M.C. Ho, C.E. Chang and C.W. Tu, Appl. Phys. Lett. 58 (1993) 254.
16. N.Y. Li, D.H. Tomich, W.S. Wong, J.S. Solomon and C.W. Tu, Mater. Res. Soc. Symp. Proc. (1996), in press.