Composition and temperature dependence of the direct band gap of GaAs1-xNx (0≤x≤0.0232) using contactless electroreflectance

Journal of Electronic Materials

Volumn 27, Issue 5, 1998, Pages 484-487

  Malikova, L ^a   Pollak, Fred H ^a   Bhat, Raj ^b  

^a CITY UNIVERSITY OF NEW YORK   (United States)

^b TELCORDIA TECHNOLOGIES   (United States)

Author keywords

Band gap; Electroreflectance; GaAsN; Temperature dependence

Indexed keywords

EID: 0001445710     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0181-5     Document Type: Article

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