Damage-induced surface effects in silicon detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 377, Issue 2-3, 1996, Pages 290-297

  Wunstorf, R ^a   Feick, H ^b   Fretwurst, E ^b   Lindstrom G ^b   Lutz, G ^c   Osius, C ^b   Richter, R H ^c   Rohe, T ^a   Rolf, A ^a   Schlichtharle P ^b  

^a TU DORTMUND UNIVERSITY   (Germany)

^b UNIVERSITY OF HAMBURG   (Germany)

^c MAX PLANCK INSTITUT FÜR PHYSIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COLLIDING BEAM ACCELERATORS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC SPACE CHARGE; ELECTRIC VARIABLES MEASUREMENT; ELECTRONIC DENSITY OF STATES; IRRADIATION; PARTICLE BEAM TRACKING; PARTICLE DETECTORS; SEMICONDUCTING SILICON; SURFACES;

DAMAGE INDUCED SURFACE EFFECTS; DENSITY OF INTERFACE STATES; ELECTRIC FIELD DISTRIBUTION; HADRON FLUX; IONIZING RADIATION; SCANNING PROTON MICRO BEAM; SILICON DETECTORS;

RADIATION DAMAGE;

EID: 0030211940     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-9002(96)00218-5     Document Type: Article

References (12)

1. E. Fretwurst et al., Nucl. Instr. and Meth. A 288 (1990) 1.
2. E. Fretwurst et al., Nucl. Instr. and Meth. A 253 (1987) 467.
3. J.F. Ziegler The Stopping and Range of Ions in Matter, Vol. 3 (Pergamon, New York, 1977).
4. H. Gajewski et al., ToSCA User's Guide, Institut für angewandete Analysis und Stochastik, Mohrenstr. 39, 10117 Berlin, Germany; for applications on Si-detectors see additional: A. Bischoff et al., Nucl. Instr. and Meth. A 326 (1993) 27.
5. H. Gajewski et al., ToSCA User's Guide, Institut für angewandete Analysis und Stochastik, Mohrenstr. 39, 10117 Berlin, Germany; for applications on Si-detectors see additional: A. Bischoff et al., Nucl. Instr. and Meth. A 326 (1993) 27.
6. S-PISCES 2B and SSUPREM 4, Silvaco International Corp., Santa Clara, CA 94054-1819, used at Brookhaven National Laboratory in cooperation with H. Kraner and Z. Li.
7. ISE Integrated Systems Engineering AG, ETH Zentrum, ETZ. CH-8092 Zurich.
8. R.H. Richter et al., these Proceedings (7th Europ. Symp. on Semiconductors, Schloss Elmau, Bavaria, Germany, 1995) Nucl. Instr. and Meth. A 377 (1996) 412.
9. J. Kemmer and G. Lutz, Nucl. Instr. and Meth. A 273 (1988) 588.
10. J.M. McGarrity et al., in: Semiconductor Silicon, eds. G. Harbeke and M. Schulz (Springer, Berlin, 1989) p. 317.
11. R. Wunstorf, Ph.D. thesis, Universität Hamburg, DESY FH1K-92-01 (1992).
12. A. Chilingarov et al., Nucl. Instr. and Meth. A 360 (1995) 432.