|
Volumn 74, Issue 3, 1993, Pages 2064-2066
|
An envelope function description of the quantum well formed in strained layer SiGe/Si modulation doped field effect transistors
a a a |
Author keywords
[No Author keywords available]
|
Indexed keywords
|
EID: 0038074585
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.354771 Document Type: Article |
Times cited : (3)
|
References (0)
|