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Volumn 42, Issue 4, 1995, Pages 612-617

Modeling of Current-Voltage Characteristics for Strained and Lattice Matched HEMT's on InP Substrate Using a Variational Charge Control Model

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; INTEGRAL EQUATIONS; MATHEMATICAL MODELS; POLYNOMIALS; SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0029289842     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.372062     Document Type: Article
Times cited : (14)

References (7)
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    • B. J. Moon, Y. H. Byum, K. Lee, and M. Shur, “New continuous heterostructure field-effect transistor model and unified parameter extraction technique,” IEEE Trans. Electron Devices, vol. ED-37, pp. 908–919, 1990.
    • (1990) IEEE Trans. Electron Devices , vol.ED-37 , pp. 908-919
    • Moon, B.J.1    Byum, Y.H.2    Lee, K.3    Shur, M.4
  • 2
    • 0023382802 scopus 로고
    • An analytic model for HEMT's using new velocity-field dependence
    • C. S. Chang and H. R. Fetterman, “An analytic model for HEMT's using new velocity-field dependence,” IEEE Trans. Electron Devices, vol. 34, pp. 1456–1462, 1987.
    • (1987) IEEE Trans. Electron Devices , vol.34 , pp. 1456-1462
    • Chang, C.S.1    Fetterman, H.R.2
  • 3
    • 0026853881 scopus 로고
    • Efficient charge control model for pseudomorphic and strained high electron mobility transistors on GaAs and InP substrate
    • G. Halkias, A. Vegiri, G. Pananakakis, and A. Christou, “Efficient charge control model for pseudomorphic and strained high electron mobility transistors on GaAs and InP substrate,” Solid State Electron., vol. 35, no. 4, pp. 459–465, 1992.
    • (1992) Solid State Electron. , vol.35 , pp. 459-465
    • Halkias, G.1    Vegiri, A.2    Pananakakis, G.3    Christou, A.4
  • 4
    • 0004457553 scopus 로고
    • Electron energy levels in GaAs-Gal-xAlX As heterojunctions
    • F. Stern and S. Das Sarma, “Electron energy levels in GaAs-Gal-x Al X As heterojunctions,” Phys. Rev. B, vol. 30, no. 2, pp. 840–847, 1984.
    • (1984) Phys. Rev. B , vol.30 , Issue.2 , pp. 840-847
    • Stern, F.1    Sarma, S.2
  • 5
    • 0017466066 scopus 로고
    • A simple two-dimensional model for IGFET operation in the saturation region
    • Y. A. El-Mansy and A. R. Boothroyd, “A simple two-dimensional model for IGFET operation in the saturation region,” IEEE Trans. Electron Devices., vol. 24, pp. 254–267, 1977.
    • (1977) IEEE Trans. Electron Devices. , vol.24 , pp. 254-267
    • El-Mansy, Y.A.1    Boothroyd, A.R.2
  • 6
    • 0021501347 scopus 로고
    • The effect of high fields on MOS devices and circuit performance
    • C. S. Sodini, P. K. Ko and J. Moll, “The effect of high fields on MOS devices and circuit performance,” IEEE Trans. Electron Devices, vol. 31, pp. 1386–1393, 1984.
    • (1984) IEEE Trans. Electron Devices , vol.31 , pp. 1386-1393
    • Sodini, C.S.1    Ko, P.K.2    Moll, J.3
  • 7
    • 0024751373 scopus 로고
    • Design and experimental characteristics of strained In0.52Al0.48As/InxGa1-xAs (x > 0.53) HEMT's
    • G.-I. Ng, D. Pavlidis, M. Jaffe, J. Singh, and H.-F. Chau, “Design and experimental characteristics of strained In 0.52 Al 0.48 As/In x Ga 1-x As (x > 0.53) HEMT's,” IEEE Trans. Electron Devices, vol. 36, pp. 2249–2258, 1989.
    • (1989) IEEE Trans. Electron Devices , vol.36 , pp. 2249-2258
    • Ng, G.-I.1    Pavlidis, D.2    Jaffe, M.3    Singh, J.4    Chau, H.-F.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.