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Volumn 35, Issue 4, 1992, Pages 459-465
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Efficient charge control model for pseudomorphic and strained high electron mobility transistors on GaAs and InP substrates
a a b c |
Author keywords
[No Author keywords available]
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Indexed keywords
MATHEMATICAL TECHNIQUES - CALCULATIONS;
OPTIMIZATION - STRUCTURE;
SEMICONDUCTING GALLIUM ARSENIDE - CHARGE CARRIERS;
SEMICONDUCTING INDIUM PHOSPHIDE - CHARGE CARRIERS;
TRANSISTORS, HIGH ELECTRON MOBILITY - MATHEMATICAL MODELS;
CHARGE CONTROL MODELS;
SCHRODINGER AND POISSON EQUATIONS;
VARIATIONAL METHODS;
TRANSISTORS, HIGH ELECTRON MOBILITY;
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EID: 0026853881
PISSN: 00381101
EISSN: None
Source Type: Journal
DOI: 10.1016/0038-1101(92)90106-M Document Type: Article |
Times cited : (12)
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References (21)
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