메뉴 건너뛰기




Volumn 42, Issue 10, 1995, Pages 1841-1846

Noise Performance of Si/Si1-xGex FET's

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; COMPUTER SIMULATION; ELECTRIC FIELDS; FERMI LEVEL; MONTE CARLO METHODS; MOSFET DEVICES; OPTIMIZATION; PERMITTIVITY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR QUANTUM WELLS; SPURIOUS SIGNAL NOISE;

EID: 0029394301     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.464411     Document Type: Letter
Times cited : (9)

References (20)
  • 2
    • 0026170817 scopus 로고
    • Graded-base Si/Si1_IGel:/Si heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition with near-ideal electrical characteristics
    • June
    • J. C. Sturm, E. J. Prinz, and C. W. Magee, “Graded-base Si/Si1_IGel:/Si heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition with near-ideal electrical characteristics,” IEEE Electron Device Lett., vol. 12, no. 6, pp. 303-305, June 1991.
    • (1991) IEEE Electron Device Lett. , vol.12 , Issue.6 , pp. 303-305
    • Sturm, J.C.1    Prinz, E.J.2    Magee, C.W.3
  • 3
    • 84911781250 scopus 로고
    • High performance 0.25 μm p-MOSFET's with silicon-germanium channel for 300 and 77 K operation
    • V. P. Kesan, S. Subbanna, P. J. Restle, and M. J. Tejwanl, “High performance 0.25 μm p-MOSFET's with silicon-germanium channel for 300 and 77 K operation,” in IEDM 91, 1991, pp. 2.2.1-2.2.4.
    • (1991) IEDM 91 , pp. 221-224
    • Kesan, V.P.1    Subbanna, S.2    Restle, P.J.3    Tejwanl, M.J.4
  • 5
    • 0026157461 scopus 로고
    • Hole confinement in MOS-gated GexSi1-x/Si heterostructures
    • P. M. Garone, V. Venkataraman, and J. C. Sturm, “Hole confinement in MOS-gated GexSi1-x/Si heterostructures,” IEEE Electron Device Lett, vol. 12, no. 5, p. 230, 1991.
    • (1991) IEEE Electron Device Lett , vol.12 , Issue.5 , pp. 230
    • Garone, P.M.1    Venkataraman, V.2    Sturm, J.C.3
  • 6
    • 0026867876 scopus 로고
    • High-transconductance n-type Si/SiGe modulation-doped field-effect transistors
    • May
    • K. Ismail, B. S. Meyerson, S. Rishton, J. Chu, S. Nelson, and J. Nocera, “High-transconductance n-type Si/SiGe modulation-doped field-effect transistors,” IEEE Electron Device Lett, vol. 13, no. 5, pp. 229-231, May 1992.
    • (1992) IEEE Electron Device Lett , vol.13 , Issue.5 , pp. 229-231
    • Ismail, K.1    Meyerson, B.S.2    Rishton, S.3    Chu, J.4    Nelson, S.5    Nocera, J.6
  • 7
    • 0001632392 scopus 로고
    • High electron mobility in modulation doped Si/SiGe
    • K. Ismail, B. S. Meyerson, and P. J. Wang, “High electron mobility in modulation doped Si/SiGe,” Appl. Phys. Lett, vol. 58, no. 19, p. 2117, 1991.
    • (1991) Appl. Phys. Lett , vol.58 , Issue.19 , pp. 2117
    • Ismail, K.1    Meyerson, B.S.2    Wang, P.J.3
  • 8
    • 0025225811 scopus 로고
    • Approximate analytic current-voltage calculation for MODFET's
    • A. N. Khondker and A. F. M. Anwar, “Approximate analytic current-voltage calculation for MODFET's,” IEEE Trans. Electron Devices, vol. 37, pp. 314-317, 1990.
    • (1990) IEEE Trans. Electron Devices , vol.37 , pp. 314-317
    • Khondker, A.N.1    Anwar, A.F.M.2
  • 9
    • 0027607807 scopus 로고
    • Noise properties of AlGaAs/GaAs MODFET's
    • June
    • A. F. M. Anwar and K. W. Liu, “Noise properties of AlGaAs/GaAs MODFET's,” IEEE. Trans. Electron Devices, vol. 40, no. 6, pp. 1174-1176, June 1993.
    • (1993) IEEE. Trans. Electron Devices , vol.40 , Issue.6 , pp. 1174-1176
    • Anwar, A.F.M.1    Liu, K.W.2
  • 10
    • 0038074585 scopus 로고
    • An envelope function description of the quantum well formed in strain layer SiGe/Si MODFET's
    • Aug.
    • A. F. M. Anwar, K. W. Liu, and R. D. Carroll, “An envelope function description of the quantum well formed in strain layer SiGe/Si MODFET's,” J. Appl. Phys., vol. 74, no. 3, pp. 2064-2066, Aug. 1993.
    • (1993) J. Appl. Phys. , vol.74 , Issue.3 , pp. 2064-2066
    • Anwar, A.F.M.1    Liu, K.W.2    Carroll, R.D.3
  • 11
    • 0016603256 scopus 로고
    • Signal and noise properties of Gallium Arsenide microwave field-effect transistors
    • R. A. Pucel et al, “Signal and noise properties of Gallium Arsenide microwave field-effect transistors,” Advances Electron, Electron Phys., vol. 38, pp. 195-265, 1974.
    • (1974) Advances Electron, Electron Phys. , vol.38 , pp. 195-265
    • Pucel, R.A.1
  • 12
    • 0023382802 scopus 로고
    • An analytic model for HEMT's using velocity-field dependence
    • C. S. Chang and H. R. Fetterman, “An analytic model for HEMT's using velocity-field dependence,” IEEE Trans. Electron Devices, vol. ED-34, no. 7, pp. 1456-1462, 1987.
    • (1987) IEEE Trans. Electron Devices , vol.34 ED , Issue.7 , pp. 1456-1462
    • Chang, C.S.1    Fetterman, H.R.2
  • 13
    • 0028482802 scopus 로고
    • An analytical model for current-voltage characteristics and DC small-signal parameters for Si/Si1-xGex FETs
    • Aug.
    • K. W. Liu, A. F. M. Anwar, and V. P. Kesan, “An analytical model for current-voltage characteristics and DC small-signal parameters for Si/Si1-xGex FETs,” Solid-State Electron., vol. 37, no. 8, pp. 1570-1572, Aug. 1994.
    • (1994) Solid-State Electron. , vol.37 , Issue.8 , pp. 1570-1572
    • Liu, K.W.1    Anwar, A.F.M.2    Kesan, V.P.3
  • 14
    • 0028259324 scopus 로고
    • A self-consistent calculation of the small-signal parameters for AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs
    • Jan.
    • K. W. Liu and A. F. M. Anwar, “A self-consistent calculation of the small-signal parameters for AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs,” Solid-State Electron., vol. 37, no. 1, pp. 51-54, Jan. 1994.
    • (1994) Solid-State Electron. , vol.37 , Issue.1 , pp. 51-54
    • Liu, K.W.1    Anwar, A.F.M.2
  • 15
    • 0016100806 scopus 로고
    • Noise characteristics of gallium arsenide field-effect transistors
    • H. Statz, H. A. Haus, and R. A. Pucel, “Noise characteristics of gallium arsenide field-effect transistors,” IEEE Trans. Electron Devices, vol. ED-21, pp. 549-562, 1974.
    • (1974) IEEE Trans. Electron Devices , vol.21 ED , pp. 549-562
    • Statz, H.1    Haus, H.A.2    Pucel, R.A.3
  • 16
    • 0022511516 scopus 로고
    • The noise properties of high electron mobility transistors
    • T. M. Brookes, “The noise properties of high electron mobility transistors,” IEEE Trans. Electron Devices, vol. ED-33, pp. 52-57, 1986.
    • (1986) IEEE Trans. Electron Devices , vol.33 ED , pp. 52-57
    • Brookes, T.M.1
  • 17
    • 0028500803 scopus 로고
    • Noise temperature modeling of AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs
    • Sept.
    • A. F. M. Anwar and K. W. Liu, “Noise temperature modeling of AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs,” Solid-State Electron., vol. 37, no. 9, pp. 1585-1588, Sept. 1994.
    • (1994) Solid-State Electron. , vol.37 , Issue.9 , pp. 1585-1588
    • Anwar, A.F.M.1    Liu, K.W.2
  • 18
    • 0023844609 scopus 로고
    • Noise modeling and measurement techniques
    • A. Cappy, “Noise modeling and measurement techniques,” IEEE Trans. Microwave Theory Technol, vol. 36, pp. 1-10, 1988.
    • (1988) IEEE Trans. Microwave Theory Technol , vol.36 , pp. 1-10
    • Cappy, A.1
  • 20
    • 0025256805 scopus 로고
    • DC, small-signal and noise modeling for two-dimensional electron gas field-effect transistors based on accurate charge-control characteristics
    • Jan.
    • Y. Ando and T. Itoh, “DC, small-signal and noise modeling for two-dimensional electron gas field-effect transistors based on accurate charge-control characteristics,” IEEE Trans. Electron Devices, vol. 37, no. 1, pp. 67-78, Jan. 1990.
    • (1990) IEEE Trans. Electron Devices , vol.37 , Issue.1 , pp. 67-78
    • Ando, Y.1    Itoh, T.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.