-
1
-
-
0026191310
-
Heterqjunction bipolar transistors with SiGe base grown by molecular beam epitaxy
-
July
-
A. Pruijmboom, J. W. Slotboom, D. J. Gravesteijn, C. W. Fredriksz, A. A. van Gorkum, R. A. van de Heuvel, J. M. L. van Rooij-Mulder, G. Streutker, and G. F. A. van de Walle, “Heterqjunction bipolar transistors with SiGe base grown by molecular beam epitaxy,” IEEE Electron Device Lett, vol. 12, no. 7, pp. 357-359, July 1991.
-
(1991)
IEEE Electron Device Lett
, vol.12
, Issue.7
, pp. 357-359
-
-
Pruijmboom, A.1
Slotboom, J.W.2
Gravesteijn, D.J.3
Fredriksz, C.W.4
van Gorkum, A.A.5
van de Heuvel, R.A.6
van Rooij-Mulder, J.M.L.7
Streutker, G.8
van de Walle, G.F.A.9
-
2
-
-
0026170817
-
Graded-base Si/Si1_IGel:/Si heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition with near-ideal electrical characteristics
-
June
-
J. C. Sturm, E. J. Prinz, and C. W. Magee, “Graded-base Si/Si1_IGel:/Si heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition with near-ideal electrical characteristics,” IEEE Electron Device Lett., vol. 12, no. 6, pp. 303-305, June 1991.
-
(1991)
IEEE Electron Device Lett.
, vol.12
, Issue.6
, pp. 303-305
-
-
Sturm, J.C.1
Prinz, E.J.2
Magee, C.W.3
-
3
-
-
84911781250
-
High performance 0.25 μm p-MOSFET's with silicon-germanium channel for 300 and 77 K operation
-
V. P. Kesan, S. Subbanna, P. J. Restle, and M. J. Tejwanl, “High performance 0.25 μm p-MOSFET's with silicon-germanium channel for 300 and 77 K operation,” in IEDM 91, 1991, pp. 2.2.1-2.2.4.
-
(1991)
IEDM 91
, pp. 221-224
-
-
Kesan, V.P.1
Subbanna, S.2
Restle, P.J.3
Tejwanl, M.J.4
-
4
-
-
0026138240
-
Enhancement-mode quantum well GexSi1-x PMOS
-
D. K. Nayak, J. C. S. Woo, J. S. Park, K. L. Wang, and K. P. MacWilliams, “Enhancement-mode quantum well GexSi1-x PMOS,” IEEE Electron Device Lett., vol. 12, no. 4, p. 154, 1991.
-
(1991)
IEEE Electron Device Lett.
, vol.12
, Issue.4
, pp. 154
-
-
Nayak, D.K.1
Woo, J.C.S.2
Park, J.S.3
Wang, K.L.4
MacWilliams, K.P.5
-
5
-
-
0026157461
-
Hole confinement in MOS-gated GexSi1-x/Si heterostructures
-
P. M. Garone, V. Venkataraman, and J. C. Sturm, “Hole confinement in MOS-gated GexSi1-x/Si heterostructures,” IEEE Electron Device Lett, vol. 12, no. 5, p. 230, 1991.
-
(1991)
IEEE Electron Device Lett
, vol.12
, Issue.5
, pp. 230
-
-
Garone, P.M.1
Venkataraman, V.2
Sturm, J.C.3
-
6
-
-
0026867876
-
High-transconductance n-type Si/SiGe modulation-doped field-effect transistors
-
May
-
K. Ismail, B. S. Meyerson, S. Rishton, J. Chu, S. Nelson, and J. Nocera, “High-transconductance n-type Si/SiGe modulation-doped field-effect transistors,” IEEE Electron Device Lett, vol. 13, no. 5, pp. 229-231, May 1992.
-
(1992)
IEEE Electron Device Lett
, vol.13
, Issue.5
, pp. 229-231
-
-
Ismail, K.1
Meyerson, B.S.2
Rishton, S.3
Chu, J.4
Nelson, S.5
Nocera, J.6
-
7
-
-
0001632392
-
High electron mobility in modulation doped Si/SiGe
-
K. Ismail, B. S. Meyerson, and P. J. Wang, “High electron mobility in modulation doped Si/SiGe,” Appl. Phys. Lett, vol. 58, no. 19, p. 2117, 1991.
-
(1991)
Appl. Phys. Lett
, vol.58
, Issue.19
, pp. 2117
-
-
Ismail, K.1
Meyerson, B.S.2
Wang, P.J.3
-
8
-
-
0025225811
-
Approximate analytic current-voltage calculation for MODFET's
-
A. N. Khondker and A. F. M. Anwar, “Approximate analytic current-voltage calculation for MODFET's,” IEEE Trans. Electron Devices, vol. 37, pp. 314-317, 1990.
-
(1990)
IEEE Trans. Electron Devices
, vol.37
, pp. 314-317
-
-
Khondker, A.N.1
Anwar, A.F.M.2
-
9
-
-
0027607807
-
Noise properties of AlGaAs/GaAs MODFET's
-
June
-
A. F. M. Anwar and K. W. Liu, “Noise properties of AlGaAs/GaAs MODFET's,” IEEE. Trans. Electron Devices, vol. 40, no. 6, pp. 1174-1176, June 1993.
-
(1993)
IEEE. Trans. Electron Devices
, vol.40
, Issue.6
, pp. 1174-1176
-
-
Anwar, A.F.M.1
Liu, K.W.2
-
10
-
-
0038074585
-
An envelope function description of the quantum well formed in strain layer SiGe/Si MODFET's
-
Aug.
-
A. F. M. Anwar, K. W. Liu, and R. D. Carroll, “An envelope function description of the quantum well formed in strain layer SiGe/Si MODFET's,” J. Appl. Phys., vol. 74, no. 3, pp. 2064-2066, Aug. 1993.
-
(1993)
J. Appl. Phys.
, vol.74
, Issue.3
, pp. 2064-2066
-
-
Anwar, A.F.M.1
Liu, K.W.2
Carroll, R.D.3
-
11
-
-
0016603256
-
Signal and noise properties of Gallium Arsenide microwave field-effect transistors
-
R. A. Pucel et al, “Signal and noise properties of Gallium Arsenide microwave field-effect transistors,” Advances Electron, Electron Phys., vol. 38, pp. 195-265, 1974.
-
(1974)
Advances Electron, Electron Phys.
, vol.38
, pp. 195-265
-
-
Pucel, R.A.1
-
12
-
-
0023382802
-
An analytic model for HEMT's using velocity-field dependence
-
C. S. Chang and H. R. Fetterman, “An analytic model for HEMT's using velocity-field dependence,” IEEE Trans. Electron Devices, vol. ED-34, no. 7, pp. 1456-1462, 1987.
-
(1987)
IEEE Trans. Electron Devices
, vol.34 ED
, Issue.7
, pp. 1456-1462
-
-
Chang, C.S.1
Fetterman, H.R.2
-
13
-
-
0028482802
-
An analytical model for current-voltage characteristics and DC small-signal parameters for Si/Si1-xGex FETs
-
Aug.
-
K. W. Liu, A. F. M. Anwar, and V. P. Kesan, “An analytical model for current-voltage characteristics and DC small-signal parameters for Si/Si1-xGex FETs,” Solid-State Electron., vol. 37, no. 8, pp. 1570-1572, Aug. 1994.
-
(1994)
Solid-State Electron.
, vol.37
, Issue.8
, pp. 1570-1572
-
-
Liu, K.W.1
Anwar, A.F.M.2
Kesan, V.P.3
-
14
-
-
0028259324
-
A self-consistent calculation of the small-signal parameters for AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs
-
Jan.
-
K. W. Liu and A. F. M. Anwar, “A self-consistent calculation of the small-signal parameters for AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs,” Solid-State Electron., vol. 37, no. 1, pp. 51-54, Jan. 1994.
-
(1994)
Solid-State Electron.
, vol.37
, Issue.1
, pp. 51-54
-
-
Liu, K.W.1
Anwar, A.F.M.2
-
15
-
-
0016100806
-
Noise characteristics of gallium arsenide field-effect transistors
-
H. Statz, H. A. Haus, and R. A. Pucel, “Noise characteristics of gallium arsenide field-effect transistors,” IEEE Trans. Electron Devices, vol. ED-21, pp. 549-562, 1974.
-
(1974)
IEEE Trans. Electron Devices
, vol.21 ED
, pp. 549-562
-
-
Statz, H.1
Haus, H.A.2
Pucel, R.A.3
-
16
-
-
0022511516
-
The noise properties of high electron mobility transistors
-
T. M. Brookes, “The noise properties of high electron mobility transistors,” IEEE Trans. Electron Devices, vol. ED-33, pp. 52-57, 1986.
-
(1986)
IEEE Trans. Electron Devices
, vol.33 ED
, pp. 52-57
-
-
Brookes, T.M.1
-
17
-
-
0028500803
-
Noise temperature modeling of AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs
-
Sept.
-
A. F. M. Anwar and K. W. Liu, “Noise temperature modeling of AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs,” Solid-State Electron., vol. 37, no. 9, pp. 1585-1588, Sept. 1994.
-
(1994)
Solid-State Electron.
, vol.37
, Issue.9
, pp. 1585-1588
-
-
Anwar, A.F.M.1
Liu, K.W.2
-
18
-
-
0023844609
-
Noise modeling and measurement techniques
-
A. Cappy, “Noise modeling and measurement techniques,” IEEE Trans. Microwave Theory Technol, vol. 36, pp. 1-10, 1988.
-
(1988)
IEEE Trans. Microwave Theory Technol
, vol.36
, pp. 1-10
-
-
Cappy, A.1
-
19
-
-
0026367080
-
Helena: A new software for the design of MMIC's
-
1991, Boston
-
H. Happy, O. Pribetich, G. Dambrine, J. Alamkan, Y. Cordier, and A. Cappy, “Helena: A new software for the design of MMIC's,” 1991 IEEE MMT-S Digest, Boston, 1991, pp. 627-630.
-
(1991)
IEEE MMT-S Digest
, pp. 627-630
-
-
Happy, H.1
Pribetich, O.2
Dambrine, G.3
Alamkan, J.4
Cordier, Y.5
Cappy, A.6
-
20
-
-
0025256805
-
DC, small-signal and noise modeling for two-dimensional electron gas field-effect transistors based on accurate charge-control characteristics
-
Jan.
-
Y. Ando and T. Itoh, “DC, small-signal and noise modeling for two-dimensional electron gas field-effect transistors based on accurate charge-control characteristics,” IEEE Trans. Electron Devices, vol. 37, no. 1, pp. 67-78, Jan. 1990.
-
(1990)
IEEE Trans. Electron Devices
, vol.37
, Issue.1
, pp. 67-78
-
-
Ando, Y.1
Itoh, T.2
|