A 155-GHz monolithic low-noise amplifier

IEEE Transactions on Microwave Theory and Techniques

Volumn 46, Issue 11 PART 1, 1998, Pages 1660-1666

  Wang, Huei ^a   Lai, Richard ^a   Kok, Yon Lin ^a   Huang, Tian Wei ^a   Aust, Michael V ^a   Chen, Yaochung C ^a   Siegel, Peter H ^a   Gaier, Todd ^a   Dengler, Robert J ^a   Allen, Barry R ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

Inp; LNA; MMIC; Phemt

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; MICROSTRIP LINES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; WAVEGUIDES;

MONOLITHIC LOW NOISE AMPLIFIER; NOISE FIGURE; SMALL SIGNAL GAIN;

AMPLIFIERS (ELECTRONIC);

EID: 0032202350     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.734551     Document Type: Article

References (13)

1. K. H. G. Duh et at., "A super low-noise O.I /j,m T-gate InAlAs-InGaAsInP HEMT," IEEE Microwave Guided Wave Lett., vol. 1, pp. 114-116, May 1991.
2. K. L. Tan et al, "140 GHz O.l-ftm gate-length pseudomorphic Ino.52Alo.4sAs/Ino.6oGao.4oAs/InP HEMT," in IEEE Int. Electron. Device Meeting Dig., Washington D.C., Dec. 1991, pp. 239-242.
3. K. L. Tan et al, "94 GHz 0.1 ftm T-gate low noise pseudomorphic InGaAs HEMT's," IEEE Electron Device Lett., vol. 11, pp. 585-587, Dec. 1990.
4. H. Wang, T. N. Ton, K. L. Tan, D. Garske, G. S. Dow, J. Berenz, M. W. Pospieszalski, and S. K. Pan, "110-120 GHz monolithic low noise amplifiers," IEEE J. Solid-State Circuits, vol. 28, pp. 988-993, Oct. 1993.
5. R. Lai, H. Wang, K. L. Tan, G. I. Ng, D. C. Streit, P. H. Liu, J. Velebir Jr., S. Chen, J. Berenz, and M. W. Pospieszalski, "A monolithically integrated 120 GHz InGaAs/InAlAs/InP HEMT amplifier," IEEE Microwave Guided Wave Lett., vol. 4, pp. 194-195, June 1994.
6. H. Wang, R. Lai, D. C. W. Lo, D. C. Streit, P. H. Liu, R. M. Dia, M. W. Pospieszalski, and J. Berenz, "A 140-GHz monolithic low noise amplifier," IEEE Microwave Guided Wave Lett., vol. 5, pp. 150-152, May 1995.
7. M. V. Aust, T. W. Huang, M. Dufault, H. Wang, D. C. W. Lo, R. Lai, M. Biedenbender, and C. C. Yang, "Ultra low noise Q-band monolithic amplifiers using InP- and GaAs-based 0.1 -/j,m HEMT technologies," in IEEE Microwave Millimeter-Wave Monolithic Circuits Symp. Dig., San Francisco, CA, June 1996.
8. H. Wang, R. Lai, S. Chen, and J. Berenz, "A monolithic 75-110 GHz balanced InP-based HEMT amplifier," IEEE Microwave Guided Wave Lett., vol. 3, pp. 381-383, Oct. 1993.
9. T. Gaier, M. Seiffert, P. Meinhold, P. Lubin, M. Sholley, R. Lai, H. Wang, B. Allen, B. Osgood, T. Block, P. H. Liu, C. Jackson, and C. R. Lawrence, "Noise performance of a cryogenically cooled 94 GHz InP MMIC amplifier and radiometer," in Int. Conf. Millimeter Submillimeter Waves Applicat. Ill Proc., vol. 2842, Denver, CO, Aug. 1996, pp. 588-593.
10. H. Wang, G. S. Dow, B. Allen, T. N. Ton, K. Tan, K. W. Chang, T. H. Chen, J. Berenz, T. S. Lin, P. Liu, D. Streit, S. Bui, J. J. Raggio, and P. D. Chow, "High performance W-band monolithic InGaAs pseudomorphic HEMT LNA's and design/analysis methodology," IEEE Trans. Microwave Theory Tech., vol. 40, pp. 417-128, Mar. 1992.
11. H. Wang, G. I. Ng, R. Lai, Y. Hwang, D. C. W. Lo, R. Dia, A. Freudenthal, and T. Block, "Fully passivated W-band InAlAs/InGaAs/InP monolithic low noise amplifiers," Proc. Inst. Elect. Eng., vol. 143, no. 5, pp. 361-366, Oct. 1996.
12. P. M. Smith, "Status of InP HEMT technology for microwave receiver applications," IEEE Trans. Microwave Theory Tech., vol. 44, pp. 2328-2333, Dec. 1996.
13. Y.-C. Shih, T.-N. Ton, and L. Q. Bui, "Waveguide-to-microstrip transitions for millimeter-wave applications," in IEEE MTT-S Int. Microwave Symp. Dig., New York, NY, June 1988, pp. 473-75.