Ultra low noise Q-band monolithic amplifiers using InP- and GaAs-based 0.1μm HEMT technologies

Digest of Papers - IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium

Volumn , Issue , 1996, Pages 89-92

  Aust, M V ^a   Huang, T W ^a   Dufault, M ^a   Wang, H ^a   Lo, D C W ^a   Lai, R ^a   Biedenbender, M ^a   Yang, C C ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURVE FITTING; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; INTEGRATED CIRCUIT MANUFACTURE; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; PERFORMANCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS;

MATCHING CIRCUITS; NOISE FIGURE; Q BAND LOW NOISE AMPLIFIERS;

AMPLIFIERS (ELECTRONIC);

EID: 0029717343     PISSN: 00748587     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)