110-120-GHz Monolithic Low-Noise Amplifiers

IEEE Journal of Solid-State Circuits

Volumn 28, Issue 10, 1993, Pages 988-993

  Wang, Huei ^a   Ton, Thuy Nhung ^a   Tan, Kin L ^a   Garske, Diane C ^a   Dow, Gee Samuel ^a   Berenz, John ^a   Pospieszalski, Marian W ^b   Pan, Shing Kuo ^b  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b NATIONAL RADIO ASTRONOMY OBSERVATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAIN CONTROL; HIGH ELECTRON MOBILITY TRANSISTORS; HYBRID INTEGRATED CIRCUITS; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SIGNAL TO NOISE RATIO;

MONOLITHIC LOW NOISE AMPLIFIERS; PSEUODOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS; THREE TERMINAL DEVICES;

AMPLIFIERS (ELECTRONIC);

EID: 0027677495     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/4.237511     Document Type: Article

References (9)

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