A Monolithic 75–110 GHz Balanced InP-Based HEMT Amplifier

IEEE Microwave and Guided Wave Letters

Volumn 3, Issue 10, 1993, Pages 381-383

  Wang, Huei ^a   Lai, Richard ^a   Chen, Sian Tek ^a   Berenz, John ^a  

^a Electronic Technology Division ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EQUIVALENT CIRCUITS; INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DEVICE MANUFACTURE;

BALANCED AMPLIFIER; MONOLITHIC; NOISE FIGURE; PSEUDOMORPHIC;

AMPLIFIERS (ELECTRONIC);

EID: 0027678732     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.242268     Document Type: Article

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