Lateral IGBT in thin SOI for high voltage high speed power IC

IEEE Transactions on Electron Devices

Volumn 45, Issue 10, 1998, Pages 2251-2254

  Leung, Ying Keung ^a   Paul, Amit K ^a   Plummer, James D ^a   Simon Wong, S ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

BIPOLAR TRANSISTORS;

EID: 0032187045     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.725263     Document Type: Article

References (13)

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