Numerical analysis of SOI IGBT switching characteristics - switching speed enhancement by reducing the SOI thickness

Volumn , Issue , 1993, Pages 248-253

  Omura, Ichiro ^a   Yasuhara, Norio ^a   Nakagawa, Akio ^a   Suzuki, Yoshie ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; GATES (TRANSISTOR); INTEGRATED CIRCUITS; INTERFACES (MATERIALS); NUMERICAL METHODS; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; SWITCHING;

BREAKDOWN VOLTAGE; INSULATED GATE BIPOLAR TRANSISTORS; ONE DIMENSIONAL MOS DIODE; SWITCHING SPEED; TONADDE II B PROGRAM; TRENCH ISOLATED HIGH VOLTAGE;

BIPOLAR TRANSISTORS;

EID: 0027271175     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)