200 C High-Temperature and High-Speed Operation of 440 V Lateral IGBTs on 1.5 μm thick SOI

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1993, Pages 687-690

  Nakagawa, Akio ^a   Yamaguchi, Yoshihiro ^a   Matsudai, Tomoko ^a   Yasuhara, Norio ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INSULATED GATE BIPOLAR TRANSISTORS (IGBT); CHARGE CARRIERS; CMOS INTEGRATED CIRCUITS; DIFFUSION; VLSI CIRCUITS;

1.5 ΜM; DEVICE DESIGN; HIGH TEMPERATURE AND HIGH SPEED; HIGH-SPEED OPERATION; HIGH-VOLTAGES; LATERAL IGBT; SPECIAL DEVICES; SWITCHING SPEED; THICK SOI; THIN SOI;

HIGH TEMPERATURE OPERATIONS; BIPOLAR TRANSISTORS;

HIGH TEMPERATURE OPERATION; SHALLOW TRENCH ISOLATION; SWITCHING SPEEDS;

EID: 0027813433     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. A. Nakagawa, N. Yasuhara, I. Omura, Y. Yamaguchi, T. Ogura and T. Matsudai, "Prospects of high voltage power ICs on thin SOI", 1992 IEEE IEDM Tech. Digest, p. 229.
2. I. Omura, N. Yasuhara, A. Nakagawa and Y. Suzuki, "Numerical analysis of SOI IGBT switching characteristics-Switching speed enhancement by reducing the SOI thickness", Proceedings of ISPSD'93, p. 248.
3. N. Yasuhara, T. Matsudai and A. Nakagawa, "SOI layer thickness and buried oxide thickness dependencies of high voltage lateral IGBT switching characteristics", Ext. Abstracts of 1993 SSDM, p. 270.
4. W. fondrak, R. Held, E. Stein and J. Korec, "A new concept for high-voltage SOI devices", Proceedings of ISPSD' 92, p. 278.
5. M. Kitagawa, I. Omura, S. Hasegawa, T. Inoue and A. Nakagawa, "An injection enhanced 4500 V insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor", 1993 IEEE IEDM Tech. Digest.